Zinc oxide for electronic, photovoltaic and optoelectronic applications
We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various s...
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| Дата: | 2011 |
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| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2011
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| Назва видання: | Физика низких температур |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118518 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1185182017-05-31T03:02:54Z Zinc oxide for electronic, photovoltaic and optoelectronic applications Godlewski, M. Guziewicz, E. Kopalko, K. Łuka, G. Łukasiewicz, M.I. Krajewski, T. Witkowski, B.S. Gierałtowska, S. XVIII Уральская международная зимняя школа по физике полупроводников We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work. 2011 Article Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ. 0132-6414 PACS: 81.05.Dz, 85.40.Xx, 75.50.Pp, 81.05.Fb, 88.40.jm, 88.40.jr http://dspace.nbuv.gov.ua/handle/123456789/118518 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
XVIII Уральская международная зимняя школа по физике полупроводников XVIII Уральская международная зимняя школа по физике полупроводников |
| spellingShingle |
XVIII Уральская международная зимняя школа по физике полупроводников XVIII Уральская международная зимняя школа по физике полупроводников Godlewski, M. Guziewicz, E. Kopalko, K. Łuka, G. Łukasiewicz, M.I. Krajewski, T. Witkowski, B.S. Gierałtowska, S. Zinc oxide for electronic, photovoltaic and optoelectronic applications Физика низких температур |
| description |
We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work. |
| format |
Article |
| author |
Godlewski, M. Guziewicz, E. Kopalko, K. Łuka, G. Łukasiewicz, M.I. Krajewski, T. Witkowski, B.S. Gierałtowska, S. |
| author_facet |
Godlewski, M. Guziewicz, E. Kopalko, K. Łuka, G. Łukasiewicz, M.I. Krajewski, T. Witkowski, B.S. Gierałtowska, S. |
| author_sort |
Godlewski, M. |
| title |
Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_short |
Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_full |
Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_fullStr |
Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_full_unstemmed |
Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_sort |
zinc oxide for electronic, photovoltaic and optoelectronic applications |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2011 |
| topic_facet |
XVIII Уральская международная зимняя школа по физике полупроводников |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118518 |
| citation_txt |
Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ. |
| series |
Физика низких температур |
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2023-10-18T20:32:25Z |
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2023-10-18T20:32:25Z |
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