Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals
We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra within the range 0.6 t...
Збережено в:
| Дата: | 2010 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118555 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We present the results of investigations concerning the effect caused by weak
magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of
impurity-defect composition. This effect was found when studying the radiative
recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was
obtained that a short-term influence of field initiates long-term changes in the intensity of
radiative recombination inherent to centers of different nature. General regularities in
behavior of the luminescence intensity have been found. This intensity changes with the
concentration of recombination centers. A possible mechanism of observed
transformations has been discussed. |
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