Defect reorganization induced by pulsed magnetic field in porous InP von Milenin, V.V., Red’ko, R.A.

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Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals von Milenin, V.V., Red’ko, R.A.

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Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures von Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

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High-frequency electromagnetic radiation of germanium crystals in magnetic fields von Milenin, G.V., Milenin, V.V., Redko, R.A.

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Cyclotron radiation of semiconductor crystals von Milenin, G.V., Milenin, V.V., Red'ko, R.A.

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Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices von Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

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Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field von Redko, R.A., Milenin, G.V., Milenin, V.V., Redko, S.M.

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Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals von Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.

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Influence of pulse magnetic fields treatment on optical properties of GaAs based films von Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.

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Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines von Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

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Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide von Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.

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Technology and experimental studies of contacts for microwave diodes based on interstitial phases von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.

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Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them von Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.

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Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures von Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.

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Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures von Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

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Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing von Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.

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A silicon carbide thermistor von Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.

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Radiation hardness of AlAs/GaAs-based resonant tunneling diodes von Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.

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Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity von Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.

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Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system von Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.

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