Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals

за авторством Milenin, V.V., Red’ko, R.A.
Опубліковано 2010

Defect reorganization induced by pulsed magnetic field in porous InP

за авторством Milenin, V.V., Red’ko, R.A.
Опубліковано 2010

Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures

за авторством Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Опубліковано 2002

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices

за авторством Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Опубліковано 2003

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

за авторством Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Опубліковано 2014

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

за авторством Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Опубліковано 2014

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

за авторством Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Опубліковано 2002

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Опубліковано 2001

Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide

за авторством Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.
Опубліковано 1999

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

за авторством Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Опубліковано 2001

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures

за авторством Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.
Опубліковано 2006

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.
Опубліковано 2008

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

за авторством Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.
Опубліковано 2002

A silicon carbide thermistor

за авторством Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.
Опубліковано 2006

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity

за авторством Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.
Опубліковано 2010

Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

за авторством Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.
Опубліковано 1999

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

за авторством Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Опубліковано 2001

Contacts for silicon IMPATT and pick-off diodes

за авторством Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
Опубліковано 2000

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs

за авторством Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.
Опубліковано 1999

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
Опубліковано 2007