Defect reorganization induced by pulsed magnetic field in porous InP by Milenin, V.V., Red’ko, R.A.

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Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals by Milenin, V.V., Red’ko, R.A.

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Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures by Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

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High-frequency electromagnetic radiation of germanium crystals in magnetic fields by Milenin, G.V., Milenin, V.V., Redko, R.A.

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Cyclotron radiation of semiconductor crystals by Milenin, G.V., Milenin, V.V., Red'ko, R.A.

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Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices by Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

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Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field by Redko, R.A., Milenin, G.V., Milenin, V.V., Redko, S.M.

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Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals by Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.

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Influence of pulse magnetic fields treatment on optical properties of GaAs based films by Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.

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Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines by Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

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Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide by Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.

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Technology and experimental studies of contacts for microwave diodes based on interstitial phases by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.

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Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them by Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.

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Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures by Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.

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Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

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Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing by Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.

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A silicon carbide thermistor by Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.

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Radiation hardness of AlAs/GaAs-based resonant tunneling diodes by Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.

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Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity by Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.

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Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system by Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.

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