Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics

In this work, effect of porous macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics prepared by the liquid silicon infiltration process has been investigated. Temperature dependences of the conductivity and thermal e.m.f. have been measured within the range 20-700 °C. It...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2009
Автори: Kiselov, V.S., Poludin, V.I., Kiselyuk, M.P., Kryskov, T.А., Belyaev, A.E.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118603
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics / V.S. Kiselov, V.I. Poludin, M.P. Kiselyuk, T.А. Kryskov, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 64-67. — Бібліогр.: 13 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:In this work, effect of porous macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics prepared by the liquid silicon infiltration process has been investigated. Temperature dependences of the conductivity and thermal e.m.f. have been measured within the range 20-700 °C. It has been shown that electrical resistivity of the samples decreases drastically as temperature increases over the entire temperature range, indicating semiconductor behavior. All the samples demonstrate a negative thermal e.m.f. confirming the electronic mechanism of charge transfer. It is ascertained that anisotropy of porous macrostructure of the ceramics influences considerably on their electric and thermoelectric properties. The figure of merit maximum value of 1.2×10⁻⁵ K⁻¹ at 700 °C was obtained.