Electrical properties of fast cooled InSe single crystals
Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature range 80 to 410 K. It is found that fast cooling, as soon as crystallization...
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| Дата: | 2008 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118664 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of fast cooled InSe single crystals / A.V. Zaslonkin, Z.D. Kovalyuk, I.V. Mintyanskii, P.I. Savitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 54-58. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118664 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1186642017-05-31T03:10:38Z Electrical properties of fast cooled InSe single crystals Zaslonkin, A.V. Kovalyuk, Z.D. Mintyanskii, I.V. Savitskii, P.I. Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature range 80 to 410 K. It is found that fast cooling, as soon as crystallization is completed, of the ingot leads to an increase of the free electron concentration, conductivity along layers, and conductivity anisotropy, as well as to a decrease of the Hall mobility of carriers along layers. The theoretical analysis of the mobility of carriers has shown that space-charge regions underlie the effective mechanism of their scattering. 2008 Article Electrical properties of fast cooled InSe single crystals / A.V. Zaslonkin, Z.D. Kovalyuk, I.V. Mintyanskii, P.I. Savitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 54-58. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 72.20.Dp, 72.20.-i, 81.10.Fq http://dspace.nbuv.gov.ua/handle/123456789/118664 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Influence of fast cooling on electrical properties of n-InSe single crystals is
investigated for an ingot grown by the Bridgman method. Electrical characteristics and
their anisotropy are investigated in the temperature range 80 to 410 K. It is found that
fast cooling, as soon as crystallization is completed, of the ingot leads to an increase of
the free electron concentration, conductivity along layers, and conductivity anisotropy, as
well as to a decrease of the Hall mobility of carriers along layers. The theoretical analysis
of the mobility of carriers has shown that space-charge regions underlie the effective
mechanism of their scattering. |
| format |
Article |
| author |
Zaslonkin, A.V. Kovalyuk, Z.D. Mintyanskii, I.V. Savitskii, P.I. |
| spellingShingle |
Zaslonkin, A.V. Kovalyuk, Z.D. Mintyanskii, I.V. Savitskii, P.I. Electrical properties of fast cooled InSe single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Zaslonkin, A.V. Kovalyuk, Z.D. Mintyanskii, I.V. Savitskii, P.I. |
| author_sort |
Zaslonkin, A.V. |
| title |
Electrical properties of fast cooled InSe single crystals |
| title_short |
Electrical properties of fast cooled InSe single crystals |
| title_full |
Electrical properties of fast cooled InSe single crystals |
| title_fullStr |
Electrical properties of fast cooled InSe single crystals |
| title_full_unstemmed |
Electrical properties of fast cooled InSe single crystals |
| title_sort |
electrical properties of fast cooled inse single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118664 |
| citation_txt |
Electrical properties of fast cooled InSe single crystals / A.V. Zaslonkin, Z.D. Kovalyuk, I.V. Mintyanskii, P.I. Savitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 54-58. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT zaslonkinav electricalpropertiesoffastcooledinsesinglecrystals AT kovalyukzd electricalpropertiesoffastcooledinsesinglecrystals AT mintyanskiiiv electricalpropertiesoffastcooledinsesinglecrystals AT savitskiipi electricalpropertiesoffastcooledinsesinglecrystals |
| first_indexed |
2023-10-18T20:32:49Z |
| last_indexed |
2023-10-18T20:32:49Z |
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1796150483107184640 |