2025-02-23T18:16:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118682%22&qt=morelikethis&rows=5
2025-02-23T18:16:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118682%22&qt=morelikethis&rows=5
2025-02-23T18:16:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T18:16:46-05:00 DEBUG: Deserialized SOLR response
Influence of initial defects on defect formation process in ion doped silicon

Influence of initial defects on defect formation process in ion doped silicon

We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance characteristics revealed two maxima of dopant concentration in epitaxi...

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Bibliographic Details
Main Authors: Smyntyna, V.A., Sviridova, O.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118682
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2025-02-23T18:16:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118682%22&qt=morelikethis
2025-02-23T18:16:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118682%22&qt=morelikethis
2025-02-23T18:16:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T18:16:46-05:00 DEBUG: Deserialized SOLR response

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