2025-02-23T18:45:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118682%22&qt=morelikethis&rows=5
2025-02-23T18:45:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118682%22&qt=morelikethis&rows=5
2025-02-23T18:45:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T18:45:11-05:00 DEBUG: Deserialized SOLR response
Influence of initial defects on defect formation process in ion doped silicon
We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance characteristics revealed two maxima of dopant concentration in epitaxi...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118682 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!