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Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system

Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system

A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy alloys, and Tgr and KG were calculated using them. T...

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Main Authors: Halyan, V.V., Shevchuk, M.V., Davydyuk, G.Ye., Voronyuk, S.V., Kevshyn, A.H., Bulatetsky, V.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118689
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spelling irk-123456789-1186892017-05-31T03:10:27Z Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system Halyan, V.V. Shevchuk, M.V. Davydyuk, G.Ye. Voronyuk, S.V. Kevshyn, A.H. Bulatetsky, V.V. A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy alloys, and Tgr and KG were calculated using them. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic distances within the first and second coordination spheres were determined. 2009 Article Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 61.43.Fs http://dspace.nbuv.gov.ua/handle/123456789/118689 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy alloys, and Tgr and KG were calculated using them. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic distances within the first and second coordination spheres were determined.
format Article
author Halyan, V.V.
Shevchuk, M.V.
Davydyuk, G.Ye.
Voronyuk, S.V.
Kevshyn, A.H.
Bulatetsky, V.V.
spellingShingle Halyan, V.V.
Shevchuk, M.V.
Davydyuk, G.Ye.
Voronyuk, S.V.
Kevshyn, A.H.
Bulatetsky, V.V.
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Halyan, V.V.
Shevchuk, M.V.
Davydyuk, G.Ye.
Voronyuk, S.V.
Kevshyn, A.H.
Bulatetsky, V.V.
author_sort Halyan, V.V.
title Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
title_short Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
title_full Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
title_fullStr Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
title_full_unstemmed Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
title_sort glass formation region and x-ray analysis of the glassy alloys in aggase₂+ges₂<=>aggas₂+gese₂ system
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2009
url http://dspace.nbuv.gov.ua/handle/123456789/118689
citation_txt Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT davydyukgye glassformationregionandxrayanalysisoftheglassyalloysinaggase2ges2aggas2gese2system
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AT kevshynah glassformationregionandxrayanalysisoftheglassyalloysinaggase2ges2aggas2gese2system
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first_indexed 2023-10-18T20:32:52Z
last_indexed 2023-10-18T20:32:52Z
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