Biomorphic SiC from peas and beans

• Дата: 2012
• Автори: Kiselov, V.S., Yukhymchyk, V.A., Poludin, V.I., Tryus, M.P., Belyaev, A.E.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118717
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Biomorphic SiC from peas and beans / V.S. Kiselov, V.A. Yukhymchyk, V.I. Poludin, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 305-309. — Бібліогр.: 18 назв. — англ.

Biomorphic porous SiC ceramics produced by impregnation with liquid or vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans (Phaseolus) precursors were investigated. Optical and scanning electron microscopy was used to study the structure of ceramics. It was shown that SiC ceramics made from endosperm of peas and beans seeds has inherited the alveolate structure and possesses many hierarchical pores with diameters varying between 20 to 100 µm. Raman spectroscopy investigations showed that the 3C polytype is formed at a synthesis temperature of about 1550 ⁰C, and that both 3C and 6H-SiC are formed at temperatures of about 1800 ⁰C. It is shown possibilities of production of ceramic articles of various forms from seeds.