Biomorphic SiC from peas and beans

Biomorphic porous SiC ceramics produced by impregnation with liquid or vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans (Phaseolus) precursors were investigated. Optical and scanning electron microscopy was used to study the structure of ceramics. It was shown that...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2012
Автори: Kiselov, V.S., Yukhymchyk, V.A., Poludin, V.I., Tryus, M.P., Belyaev, A.E.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118717
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Biomorphic SiC from peas and beans / V.S. Kiselov, V.A. Yukhymchyk, V.I. Poludin, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 305-309. — Бібліогр.: 18 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118717
record_format dspace
spelling irk-123456789-1187172017-06-01T03:05:03Z Biomorphic SiC from peas and beans Kiselov, V.S. Yukhymchyk, V.A. Poludin, V.I. Tryus, M.P. Belyaev, A.E. Biomorphic porous SiC ceramics produced by impregnation with liquid or vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans (Phaseolus) precursors were investigated. Optical and scanning electron microscopy was used to study the structure of ceramics. It was shown that SiC ceramics made from endosperm of peas and beans seeds has inherited the alveolate structure and possesses many hierarchical pores with diameters varying between 20 to 100 µm. Raman spectroscopy investigations showed that the 3C polytype is formed at a synthesis temperature of about 1550 ⁰C, and that both 3C and 6H-SiC are formed at temperatures of about 1800 ⁰C. It is shown possibilities of production of ceramic articles of various forms from seeds. 2012 Article Biomorphic SiC from peas and beans / V.S. Kiselov, V.A. Yukhymchyk, V.I. Poludin, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 305-309. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 77.84.Bw, 82.80.Gk http://dspace.nbuv.gov.ua/handle/123456789/118717 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Biomorphic porous SiC ceramics produced by impregnation with liquid or vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans (Phaseolus) precursors were investigated. Optical and scanning electron microscopy was used to study the structure of ceramics. It was shown that SiC ceramics made from endosperm of peas and beans seeds has inherited the alveolate structure and possesses many hierarchical pores with diameters varying between 20 to 100 µm. Raman spectroscopy investigations showed that the 3C polytype is formed at a synthesis temperature of about 1550 ⁰C, and that both 3C and 6H-SiC are formed at temperatures of about 1800 ⁰C. It is shown possibilities of production of ceramic articles of various forms from seeds.
format Article
author Kiselov, V.S.
Yukhymchyk, V.A.
Poludin, V.I.
Tryus, M.P.
Belyaev, A.E.
spellingShingle Kiselov, V.S.
Yukhymchyk, V.A.
Poludin, V.I.
Tryus, M.P.
Belyaev, A.E.
Biomorphic SiC from peas and beans
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kiselov, V.S.
Yukhymchyk, V.A.
Poludin, V.I.
Tryus, M.P.
Belyaev, A.E.
author_sort Kiselov, V.S.
title Biomorphic SiC from peas and beans
title_short Biomorphic SiC from peas and beans
title_full Biomorphic SiC from peas and beans
title_fullStr Biomorphic SiC from peas and beans
title_full_unstemmed Biomorphic SiC from peas and beans
title_sort biomorphic sic from peas and beans
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118717
citation_txt Biomorphic SiC from peas and beans / V.S. Kiselov, V.A. Yukhymchyk, V.I. Poludin, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 305-309. — Бібліогр.: 18 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kiselovvs biomorphicsicfrompeasandbeans
AT yukhymchykva biomorphicsicfrompeasandbeans
AT poludinvi biomorphicsicfrompeasandbeans
AT tryusmp biomorphicsicfrompeasandbeans
AT belyaevae biomorphicsicfrompeasandbeans
first_indexed 2023-10-18T20:32:15Z
last_indexed 2023-10-18T20:32:15Z
_version_ 1796150444867715072