Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.
Збережено в:
| Дата: | 2012 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118719 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118719 |
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dspace |
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irk-123456789-1187192017-06-01T03:04:55Z Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied. 2012 Article Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/118719 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Using the isovalent substitution method, CdSe heterolayers of cubic
modification were obtained for the first time on single-crystal CdTe substrates, and their
basic physical properties were studied. |
| format |
Article |
| author |
Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
| spellingShingle |
Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
| author_sort |
Makhniy, V.P. |
| title |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_short |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_full |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_fullStr |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_full_unstemmed |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_sort |
properties of cdse heterolayers obtained by isovalent substitution on cdte substrates |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118719 |
| citation_txt |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:15Z |
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