Photoluminescence studies of CdTe polycrystalline films
Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films was ranged from 10 up to 360 μm. The distinct spectral bands around 1.580 and...
Збережено в:
| Дата: | 2012 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118723 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Photoluminescence (PL) studies of CdTe polycrystalline films are reported.
The films were grown using the modified close space sublimation technique on sapphire
substrates. The mean grain size in the investigated films was ranged from 10 up to
360 μm. The distinct spectral bands around 1.580 and 1.440 eV were observed at 77 K.
These bands are attributed to shallow bound excitons at dislocations and deep defects,
respectively. The intensity of luminescence related to dislocation defects is found to be
proportional to the density of grain boundaries. The nature of grain boundaries in the
investigated films has been briefly discussed. |
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