Photoluminescence studies of CdTe polycrystalline films
Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films was ranged from 10 up to 360 μm. The distinct spectral bands around 1.580 and...
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| Дата: | 2012 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118723 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118723 |
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| record_format |
dspace |
| spelling |
irk-123456789-1187232017-06-01T03:04:58Z Photoluminescence studies of CdTe polycrystalline films Tetyorkin, V.V. Sukach, A.V. Stariy, S.V. Boiko, V.A. Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films was ranged from 10 up to 360 μm. The distinct spectral bands around 1.580 and 1.440 eV were observed at 77 K. These bands are attributed to shallow bound excitons at dislocations and deep defects, respectively. The intensity of luminescence related to dislocation defects is found to be proportional to the density of grain boundaries. The nature of grain boundaries in the investigated films has been briefly discussed. 2012 Article Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS 78.55.E http://dspace.nbuv.gov.ua/handle/123456789/118723 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Photoluminescence (PL) studies of CdTe polycrystalline films are reported.
The films were grown using the modified close space sublimation technique on sapphire
substrates. The mean grain size in the investigated films was ranged from 10 up to
360 μm. The distinct spectral bands around 1.580 and 1.440 eV were observed at 77 K.
These bands are attributed to shallow bound excitons at dislocations and deep defects,
respectively. The intensity of luminescence related to dislocation defects is found to be
proportional to the density of grain boundaries. The nature of grain boundaries in the
investigated films has been briefly discussed. |
| format |
Article |
| author |
Tetyorkin, V.V. Sukach, A.V. Stariy, S.V. Boiko, V.A. |
| spellingShingle |
Tetyorkin, V.V. Sukach, A.V. Stariy, S.V. Boiko, V.A. Photoluminescence studies of CdTe polycrystalline films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Tetyorkin, V.V. Sukach, A.V. Stariy, S.V. Boiko, V.A. |
| author_sort |
Tetyorkin, V.V. |
| title |
Photoluminescence studies of CdTe polycrystalline films |
| title_short |
Photoluminescence studies of CdTe polycrystalline films |
| title_full |
Photoluminescence studies of CdTe polycrystalline films |
| title_fullStr |
Photoluminescence studies of CdTe polycrystalline films |
| title_full_unstemmed |
Photoluminescence studies of CdTe polycrystalline films |
| title_sort |
photoluminescence studies of cdte polycrystalline films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118723 |
| citation_txt |
Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:15Z |
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2023-10-18T20:32:15Z |
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