The impact of heavy Ga doping on superconductivity in germanium
We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of na...
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| Дата: | 2011 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2011
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| Назва видання: | Физика низких температур |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118783 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The impact of heavy Ga doping on superconductivity in germanium / R. Skrotzki, T. Herrmannsdörfer, V. Heera, J. Fiedler, A. Mücklich, M. Helm, J. Wosnitza // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1098–1106. — Бібліогр.: 44 назв. — англ. |
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irk-123456789-1187832017-06-01T03:03:15Z The impact of heavy Ga doping on superconductivity in germanium Skrotzki, R. Herrmannsdörfer, T. Heera, V. Fiedler, J. Mücklich, A. Helm, M. Wosnitza, J. Сверхпроводимость и сверхтекучесть We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of nanocrystalline and epitaxially grown sublayers with Ga-peak concentrations of up to 8 at.%. Successive structural investigations were carried out by means of Rutherford-backscattering spectrometry in combination with ion channelling, secondaryion-mass spectrometry, and high-resolution cross-sectional transmission electron microscopy. Hole densities of 1.8·10²⁰ to 5.3·10²⁰ cm⁻³ (0.4 to 1.2 at.%) were estimated via Hall-effect measurements revealing that only a fraction of the incorporated gallium has been activated electrically to generate free charge carriers. The coincidence of a sufficiently high hole and Ga concentration is required for the formation of a superconducting condensate. Our data reflect a critical hole concentration of around 0.4 at.%. Higher concentrations lead to an increase of Tc from 0.24 to 0.43 K as characterized by electrical-transport measurements. A short mean-free path indicates superconductivity in the dirty limit. In addition, small critical-current densities of max. 20 kA/m² point to a large impact of the microstructure. 2011 Article The impact of heavy Ga doping on superconductivity in germanium / R. Skrotzki, T. Herrmannsdörfer, V. Heera, J. Fiedler, A. Mücklich, M. Helm, J. Wosnitza // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1098–1106. — Бібліогр.: 44 назв. — англ. 0132-6414 PACS: 74.10.+v, 74.78.–w http://dspace.nbuv.gov.ua/handle/123456789/118783 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Сверхпроводимость и сверхтекучесть Сверхпроводимость и сверхтекучесть |
| spellingShingle |
Сверхпроводимость и сверхтекучесть Сверхпроводимость и сверхтекучесть Skrotzki, R. Herrmannsdörfer, T. Heera, V. Fiedler, J. Mücklich, A. Helm, M. Wosnitza, J. The impact of heavy Ga doping on superconductivity in germanium Физика низких температур |
| description |
We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of nanocrystalline and epitaxially grown sublayers with Ga-peak concentrations of up to 8 at.%. Successive structural investigations were carried out by means of Rutherford-backscattering spectrometry in combination with ion channelling, secondaryion-mass spectrometry, and high-resolution cross-sectional transmission electron microscopy. Hole densities of 1.8·10²⁰ to 5.3·10²⁰ cm⁻³ (0.4 to 1.2 at.%) were estimated via Hall-effect measurements revealing that only a fraction of the incorporated gallium has been activated electrically to generate free charge carriers. The coincidence of a sufficiently high hole and Ga concentration is required for the formation of a superconducting condensate. Our data reflect a critical hole concentration of around 0.4 at.%. Higher concentrations lead to an increase of Tc from 0.24 to 0.43 K as characterized by electrical-transport measurements. A short mean-free path indicates superconductivity in the dirty limit. In addition, small critical-current densities of max. 20 kA/m² point to a large impact of the microstructure. |
| format |
Article |
| author |
Skrotzki, R. Herrmannsdörfer, T. Heera, V. Fiedler, J. Mücklich, A. Helm, M. Wosnitza, J. |
| author_facet |
Skrotzki, R. Herrmannsdörfer, T. Heera, V. Fiedler, J. Mücklich, A. Helm, M. Wosnitza, J. |
| author_sort |
Skrotzki, R. |
| title |
The impact of heavy Ga doping on superconductivity in germanium |
| title_short |
The impact of heavy Ga doping on superconductivity in germanium |
| title_full |
The impact of heavy Ga doping on superconductivity in germanium |
| title_fullStr |
The impact of heavy Ga doping on superconductivity in germanium |
| title_full_unstemmed |
The impact of heavy Ga doping on superconductivity in germanium |
| title_sort |
impact of heavy ga doping on superconductivity in germanium |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2011 |
| topic_facet |
Сверхпроводимость и сверхтекучесть |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118783 |
| citation_txt |
The impact of heavy Ga doping on superconductivity in germanium / R. Skrotzki, T. Herrmannsdörfer, V. Heera, J. Fiedler, A. Mücklich, M. Helm, J. Wosnitza // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1098–1106. — Бібліогр.: 44 назв. — англ. |
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Физика низких температур |
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