Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure

Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure

In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sa...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2009
Автори: Abbasov, Sh.M., Aghaverdiyeva, G.T., Ibrahimov, Z.A., Farajova, U.F., Ibrahimova, R.A., Mehdevi, Heyder
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118836
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Цитувати:Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1188362017-06-01T03:06:24Z Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the role of traps for change carriers. 2009 Article Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 42.25.Bs, 78.40.-q, 81.15.-z http://dspace.nbuv.gov.ua/handle/123456789/118836 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the role of traps for change carriers.
format Article
author Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
spellingShingle Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
author_sort Abbasov, Sh.M.
title Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_short Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_full Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_fullStr Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_full_unstemmed Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_sort influence of electron irradiation on spectra of light electroreflection from the surface of ge/ge₁₋xsix heterostructure
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2009
url http://dspace.nbuv.gov.ua/handle/123456789/118836
citation_txt Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:33:07Z
last_indexed 2023-10-18T20:33:07Z
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