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Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz

Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz

Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall effect method within the temperature rang...

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Main Authors: Babych, V.М., Olikh, Ja.М., Tymochko, M.D.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118840
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spelling irk-123456789-1188402017-06-01T03:06:25Z Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz Babych, V.М. Olikh, Ja.М. Tymochko, M.D. Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall effect method within the temperature range 100–300 K. Peculiarities of US action in the treatment and loading modes on the temperature hysteresis of electrophysical characteristics in investigated material (extension and narrowing) were analyzed. Diffusion and deformation mechanisms responsible for US modification of defect complexes have been suggested. 2009 Article Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 43.35.-c,+d, 61.72.Cc, 61.80.-x, 72.20.My, 81.40.Wx http://dspace.nbuv.gov.ua/handle/123456789/118840 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall effect method within the temperature range 100–300 K. Peculiarities of US action in the treatment and loading modes on the temperature hysteresis of electrophysical characteristics in investigated material (extension and narrowing) were analyzed. Diffusion and deformation mechanisms responsible for US modification of defect complexes have been suggested.
format Article
author Babych, V.М.
Olikh, Ja.М.
Tymochko, M.D.
spellingShingle Babych, V.М.
Olikh, Ja.М.
Tymochko, M.D.
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Babych, V.М.
Olikh, Ja.М.
Tymochko, M.D.
author_sort Babych, V.М.
title Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
title_short Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
title_full Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
title_fullStr Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
title_full_unstemmed Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
title_sort influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-si–fz
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2009
url http://dspace.nbuv.gov.ua/handle/123456789/118840
citation_txt Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT babychvm influenceofultrasoundtreatmentanddynamicinsituultrasoundloadingonthetemperaturehysteresisofelectrophysicalcharacteristicsinirradiatednsifz
AT olikhjam influenceofultrasoundtreatmentanddynamicinsituultrasoundloadingonthetemperaturehysteresisofelectrophysicalcharacteristicsinirradiatednsifz
AT tymochkomd influenceofultrasoundtreatmentanddynamicinsituultrasoundloadingonthetemperaturehysteresisofelectrophysicalcharacteristicsinirradiatednsifz
first_indexed 2023-10-18T20:33:07Z
last_indexed 2023-10-18T20:33:07Z
_version_ 1796150499364306944

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