Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall effect method within the temperature rang...
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| Дата: | 2009 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118840 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1188402017-06-01T03:06:25Z Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz Babych, V.М. Olikh, Ja.М. Tymochko, M.D. Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall effect method within the temperature range 100–300 K. Peculiarities of US action in the treatment and loading modes on the temperature hysteresis of electrophysical characteristics in investigated material (extension and narrowing) were analyzed. Diffusion and deformation mechanisms responsible for US modification of defect complexes have been suggested. 2009 Article Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 43.35.-c,+d, 61.72.Cc, 61.80.-x, 72.20.My, 81.40.Wx http://dspace.nbuv.gov.ua/handle/123456789/118840 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Presented in this paper are experimental results of ultrasound treatment (UST)
and dynamic ultrasound loading (USL) influences on the electric activity of radiation
defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
effect method within the temperature range 100–300 K. Peculiarities of US action in the
treatment and loading modes on the temperature hysteresis of electrophysical
characteristics in investigated material (extension and narrowing) were analyzed.
Diffusion and deformation mechanisms responsible for US modification of defect
complexes have been suggested. |
| format |
Article |
| author |
Babych, V.М. Olikh, Ja.М. Tymochko, M.D. |
| spellingShingle |
Babych, V.М. Olikh, Ja.М. Tymochko, M.D. Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Babych, V.М. Olikh, Ja.М. Tymochko, M.D. |
| author_sort |
Babych, V.М. |
| title |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_short |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_full |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_fullStr |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_full_unstemmed |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_sort |
influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-si–fz |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118840 |
| citation_txt |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:33:07Z |
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