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Stacking Faults in the single crystals

The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle siz...

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Main Authors: Mihir M. Vora, Aditya M. Vora
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118848
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spelling irk-123456789-1188482017-06-01T03:05:28Z Stacking Faults in the single crystals Mihir M. Vora Aditya M. Vora The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal. 2009 Article Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 61.10.-i, 61.72.-y, 61.72.Dd, Nn http://dspace.nbuv.gov.ua/handle/123456789/118848 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal.
format Article
author Mihir M. Vora
Aditya M. Vora
spellingShingle Mihir M. Vora
Aditya M. Vora
Stacking Faults in the single crystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Mihir M. Vora
Aditya M. Vora
author_sort Mihir M. Vora
title Stacking Faults in the single crystals
title_short Stacking Faults in the single crystals
title_full Stacking Faults in the single crystals
title_fullStr Stacking Faults in the single crystals
title_full_unstemmed Stacking Faults in the single crystals
title_sort stacking faults in the single crystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2009
url http://dspace.nbuv.gov.ua/handle/123456789/118848
citation_txt Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT mihirmvora stackingfaultsinthesinglecrystals
AT adityamvora stackingfaultsinthesinglecrystals
first_indexed 2023-10-18T20:33:08Z
last_indexed 2023-10-18T20:33:08Z
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