Stacking Faults in the single crystals
The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle siz...
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Дата: | 2009 |
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Автори: | , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118848 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ. |
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irk-123456789-1188482017-06-01T03:05:28Z Stacking Faults in the single crystals Mihir M. Vora Aditya M. Vora The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal. 2009 Article Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 61.10.-i, 61.72.-y, 61.72.Dd, Nn http://dspace.nbuv.gov.ua/handle/123456789/118848 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz.
MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct
vapour transport technique (DVT) in the laboratory. Structural characterization of these
crystals was made using the XRD method. The particle size for a number of reflections
has been calculated using the Scherrer formula. There are considerable variations
appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1)
and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the
stacking fault in the single crystal. |
format |
Article |
author |
Mihir M. Vora Aditya M. Vora |
spellingShingle |
Mihir M. Vora Aditya M. Vora Stacking Faults in the single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Mihir M. Vora Aditya M. Vora |
author_sort |
Mihir M. Vora |
title |
Stacking Faults in the single crystals |
title_short |
Stacking Faults in the single crystals |
title_full |
Stacking Faults in the single crystals |
title_fullStr |
Stacking Faults in the single crystals |
title_full_unstemmed |
Stacking Faults in the single crystals |
title_sort |
stacking faults in the single crystals |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2009 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118848 |
citation_txt |
Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT mihirmvora stackingfaultsinthesinglecrystals AT adityamvora stackingfaultsinthesinglecrystals |
first_indexed |
2023-10-18T20:33:08Z |
last_indexed |
2023-10-18T20:33:08Z |
_version_ |
1796150500208410624 |