Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers

Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers

The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads to the absorption edge shift into the longwave spectral region. The values o...

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Бібліографічні деталі
Дата:2009
Автори: Rubish, V.M., Gera, E.B., Pop, M.M., Maryan, V.M., Kostyukevych, S.O., Moskalenko, N.L., Semak, D.G., Kostyukevych, K.V., Kryuchin, A.A., Petrov, V.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118869
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1188692017-06-01T03:02:33Z Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers Rubish, V.M. Gera, E.B. Pop, M.M. Maryan, V.M. Kostyukevych, S.O. Moskalenko, N.L. Semak, D.G. Kostyukevych, K.V. Kryuchin, A.A. Petrov, V.V. The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads to the absorption edge shift into the longwave spectral region. The values of pseudogap width Eg are determined. Optical characteristic changes of films are caused by photo-thermostructural transformations taking place in them under irradiation and annealing. 2009 Article Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 78.66.Jg http://dspace.nbuv.gov.ua/handle/123456789/118869 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads to the absorption edge shift into the longwave spectral region. The values of pseudogap width Eg are determined. Optical characteristic changes of films are caused by photo-thermostructural transformations taking place in them under irradiation and annealing.
format Article
author Rubish, V.M.
Gera, E.B.
Pop, M.M.
Maryan, V.M.
Kostyukevych, S.O.
Moskalenko, N.L.
Semak, D.G.
Kostyukevych, K.V.
Kryuchin, A.A.
Petrov, V.V.
spellingShingle Rubish, V.M.
Gera, E.B.
Pop, M.M.
Maryan, V.M.
Kostyukevych, S.O.
Moskalenko, N.L.
Semak, D.G.
Kostyukevych, K.V.
Kryuchin, A.A.
Petrov, V.V.
Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Rubish, V.M.
Gera, E.B.
Pop, M.M.
Maryan, V.M.
Kostyukevych, S.O.
Moskalenko, N.L.
Semak, D.G.
Kostyukevych, K.V.
Kryuchin, A.A.
Petrov, V.V.
author_sort Rubish, V.M.
title Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_short Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_full Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_fullStr Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_full_unstemmed Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_sort photo-thermoinduced changes of transmission spectra of as₄₀-xsbxs₆₀ amorphous layers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2009
url http://dspace.nbuv.gov.ua/handle/123456789/118869
citation_txt Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:33:11Z
last_indexed 2023-10-18T20:33:11Z
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