Structure and electrical properties of In₂Se₃Mn layered crystals
Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as well as existence of two phases (In₂Se₃ and MnIn₂Se...
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| Дата: | 2009 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118878 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118878 |
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irk-123456789-1188782017-06-01T03:06:09Z Structure and electrical properties of In₂Se₃Mn layered crystals Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along (σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value ΔЕδ between the layers were calculated for the crystals under investigations. 2009 Article Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 72.20.Dp, 72.20.-i, 81.10.Fq http://dspace.nbuv.gov.ua/handle/123456789/118878 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Investigations of the crystalline structure and electrical properties of
In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have
found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as
well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots
In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along
(σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the
anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value
ΔЕδ between the layers were calculated for the crystals under investigations. |
| format |
Article |
| author |
Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
| spellingShingle |
Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. Structure and electrical properties of In₂Se₃Mn layered crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
| author_sort |
Kaminskii, V.M. |
| title |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_short |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_full |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_fullStr |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_full_unstemmed |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_sort |
structure and electrical properties of in₂se₃mn layered crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118878 |
| citation_txt |
Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:33:13Z |
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2023-10-18T20:33:13Z |
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