Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals

Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals

The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanis...

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Бібліографічні деталі
Дата:1999
Автори: Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119062
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119062
record_format dspace
spelling irk-123456789-1190622017-06-04T03:02:33Z Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals Klad'ko, V. P. Grigoriev, D.O. Datsenko, L.I. Machulin, V.F. Prokopenko, I.V. The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanisms of profile formation of a spatial intensity distribution of diffracted beams depending on an energy of radiation and on structural perfection parameters of crystals are discussed. The formulae for an analytical description of spatial intensity distribution profiles which take into account the dynamical corrections (coefficients of extinction) for coherent and incoherent components of the total reflectivity were used. 1999 Article Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 81.40.-Z,61.66.Bi http://dspace.nbuv.gov.ua/handle/123456789/119062 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanisms of profile formation of a spatial intensity distribution of diffracted beams depending on an energy of radiation and on structural perfection parameters of crystals are discussed. The formulae for an analytical description of spatial intensity distribution profiles which take into account the dynamical corrections (coefficients of extinction) for coherent and incoherent components of the total reflectivity were used.
format Article
author Klad'ko, V. P.
Grigoriev, D.O.
Datsenko, L.I.
Machulin, V.F.
Prokopenko, I.V.
spellingShingle Klad'ko, V. P.
Grigoriev, D.O.
Datsenko, L.I.
Machulin, V.F.
Prokopenko, I.V.
Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Klad'ko, V. P.
Grigoriev, D.O.
Datsenko, L.I.
Machulin, V.F.
Prokopenko, I.V.
author_sort Klad'ko, V. P.
title Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_short Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_full Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_fullStr Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_full_unstemmed Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_sort influence of absorption level on mechanisms of braggdiffracted x-ray beam formation in real silicon crystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/119062
citation_txt Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT datsenkoli influenceofabsorptionlevelonmechanismsofbraggdiffractedxraybeamformationinrealsiliconcrystals
AT machulinvf influenceofabsorptionlevelonmechanismsofbraggdiffractedxraybeamformationinrealsiliconcrystals
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first_indexed 2023-10-18T20:31:04Z
last_indexed 2023-10-18T20:31:04Z
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