Suchergebnisse - Machulin, V.F.
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Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals von Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)Volltext
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Investigation of superlattice structure parameters using quasi-forbidden reflections von Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)Volltext
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Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals von Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)Volltext
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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing von Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)Volltext
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