Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix
The results of experimental researches of photoluminescence (PL) spectra in Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures with high-temperature (1100 °C) and following low-temperature annealings in various regimes are given. We have found that additional...
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| Дата: | 2008 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119068 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix / I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 352-355. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119068 |
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dspace |
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irk-123456789-1190682017-06-04T03:03:02Z Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix Khatsevich, I. Melnik, V. Popov, V. Romanyuk, B. Fedulov, V. The results of experimental researches of photoluminescence (PL) spectra in Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures with high-temperature (1100 °C) and following low-temperature annealings in various regimes are given. We have found that additional low-temperature treatments in definite regimes result in substantial increase of the PL intensity, thus a maximum effect is observed after annealing in air. The possible mechanisms of the obtained effects are discussed. Those are based on supposition about the dominating contribution of luminescence through the electronic states on SiO₂-Si nanoclaster interfaces, which is related to defect and impurity complexes. It has been shown that growth of the PL intensity is governed by two effects: generation of new centers of radiative recombination on the nanocrystal-dielectric matrix interfaces, and passivation of nonradiative recombination centers. 2008 Article Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix / I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 352-355. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 61.72.T, 78.55.M http://dspace.nbuv.gov.ua/handle/123456789/119068 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The results of experimental researches of photoluminescence (PL) spectra in
Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures
with high-temperature (1100 °C) and following low-temperature annealings in various
regimes are given. We have found that additional low-temperature treatments in definite
regimes result in substantial increase of the PL intensity, thus a maximum effect is
observed after annealing in air. The possible mechanisms of the obtained effects are
discussed. Those are based on supposition about the dominating contribution of
luminescence through the electronic states on SiO₂-Si nanoclaster interfaces, which is
related to defect and impurity complexes. It has been shown that growth of the PL
intensity is governed by two effects: generation of new centers of radiative
recombination on the nanocrystal-dielectric matrix interfaces, and passivation of nonradiative
recombination centers. |
| format |
Article |
| author |
Khatsevich, I. Melnik, V. Popov, V. Romanyuk, B. Fedulov, V. |
| spellingShingle |
Khatsevich, I. Melnik, V. Popov, V. Romanyuk, B. Fedulov, V. Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Khatsevich, I. Melnik, V. Popov, V. Romanyuk, B. Fedulov, V. |
| author_sort |
Khatsevich, I. |
| title |
Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_short |
Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_full |
Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_fullStr |
Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_full_unstemmed |
Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_sort |
effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized si nanocrystals in sio₂ matrix |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119068 |
| citation_txt |
Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix / I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 352-355. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT khatsevichi effectoflowtemperaturetreatmentsonphotoluminescenceenhancementofionbeamsynthesizedsinanocrystalsinsio2matrix AT melnikv effectoflowtemperaturetreatmentsonphotoluminescenceenhancementofionbeamsynthesizedsinanocrystalsinsio2matrix AT popovv effectoflowtemperaturetreatmentsonphotoluminescenceenhancementofionbeamsynthesizedsinanocrystalsinsio2matrix AT romanyukb effectoflowtemperaturetreatmentsonphotoluminescenceenhancementofionbeamsynthesizedsinanocrystalsinsio2matrix AT fedulovv effectoflowtemperaturetreatmentsonphotoluminescenceenhancementofionbeamsynthesizedsinanocrystalsinsio2matrix |
| first_indexed |
2023-10-18T20:33:41Z |
| last_indexed |
2023-10-18T20:33:41Z |
| _version_ |
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