Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix by Khatsevich, I., Melnik, V., Popov, V., Romanyuk, B., Fedulov, V.

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Study of postimplantation annealing of SiC by Avramenko, S.F., Kiselev, V.S., Romanyuk, B.N., Valakh, M.Ya.

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Activation of porous Si blue emission due to preanodization ion implantation by Rozhin, A.G., Klyui, N.I., Litovchenko, V.G., Melnik, V.P., Romanyuk, B.N., Piryatinskii, Yu.P.

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Investigations of impurity gettering in multicrystalline silicon by Evtukh, A.A., Litovchenko, V.G., Oberemok, A.S., Popov, V.G., Rassamakin, Yu.V., Romanyuk, B.N., Volkov, S.G.

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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient by Sabov, T.M., Oberemok, O.S., Dubikovskyi, O.V., Melnik, V.P., Kladko, V.P., Romanyuk, B.M., Popov, V.G., Gudymenko, O.Yo., Safriuk, N.V.

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