Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells
A study for the effects of size quantization and strain effects on the valence band spectra, the interband matrix elements, and the light gain spectrum in zinc-blende GaN quantum wells is presented. In the framework of the effective mass theory, the Schrödinger equation is solved for the valence...
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| Дата: | 2008 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119073 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells / L.O. Lokot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 364-369. — Бібліогр.: 36 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119073 |
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dspace |
| spelling |
irk-123456789-1190732017-06-04T03:02:46Z Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells Lokot, L.O. A study for the effects of size quantization and strain effects on the valence band spectra, the interband matrix elements, and the light gain spectrum in zinc-blende GaN quantum wells is presented. In the framework of the effective mass theory, the Schrödinger equation is solved for the valence bands with a 3×3 block Hamiltonian. The results are illustrated for the GaN/Al₀.₁₉Ga₀.₈₁N quantum well. It is shown, that the biaxial strain causes quite significant changes to the gain spectra in spatially confined structures. It is shown, that laser effect is suppressed with arising of the circular loop of valence band maxima in the heterostructure under the tensile strain, while under the compressive strain, the stimulated emission is pronounced. Our results show the internal strain effects are important in optical properties of GaN and associated quantum well structures. 2008 Article Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells / L.O. Lokot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 364-369. — Бібліогр.: 36 назв. — англ. 1560-8034 PACS 61.50.Ah, 70, 81.05.Ea http://dspace.nbuv.gov.ua/handle/123456789/119073 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A study for the effects of size quantization and strain effects on the valence
band spectra, the interband matrix elements, and the light gain spectrum in zinc-blende
GaN quantum wells is presented. In the framework of the effective mass theory, the
Schrödinger equation is solved for the valence bands with a 3×3 block Hamiltonian. The
results are illustrated for the GaN/Al₀.₁₉Ga₀.₈₁N quantum well. It is shown, that the biaxial
strain causes quite significant changes to the gain spectra in spatially confined structures.
It is shown, that laser effect is suppressed with arising of the circular loop of valence
band maxima in the heterostructure under the tensile strain, while under the compressive
strain, the stimulated emission is pronounced. Our results show the internal strain effects
are important in optical properties of GaN and associated quantum well structures. |
| format |
Article |
| author |
Lokot, L.O. |
| spellingShingle |
Lokot, L.O. Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Lokot, L.O. |
| author_sort |
Lokot, L.O. |
| title |
Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells |
| title_short |
Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells |
| title_full |
Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells |
| title_fullStr |
Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells |
| title_full_unstemmed |
Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells |
| title_sort |
strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende gan quantum wells |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119073 |
| citation_txt |
Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells / L.O. Lokot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 364-369. — Бібліогр.: 36 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT lokotlo straineffectsonthevalencebandstructureopticaltransitionsandlightgainspectrumsinzincblendeganquantumwells |
| first_indexed |
2023-10-18T20:33:41Z |
| last_indexed |
2023-10-18T20:33:41Z |
| _version_ |
1796150521728335872 |