Interface electronic properties of eterojunctions based on nanocrystalline silicon

For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto s...

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Дата:	1999
Автори:	Kaganovich, E.B., Kirillova, S.I., Manoilov, E.G., Primachenko, V.E., Svechnikov, S.V.
Формат:	Стаття
Мова:	English
Опубліковано:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:	Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:	http://dspace.nbuv.gov.ua/handle/123456789/119107
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:	Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

id	irk-123456789-119107
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spelling	irk-123456789-1191072017-06-05T03:03:04Z Interface electronic properties of eterojunctions based on nanocrystalline silicon Kaganovich, E.B. Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V. For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto substrates situated at a distance from the target and onto the plane of target were studied. The temperature dependencies of concentration of charge carriers captured in the traps in the heterojunction interface, and of distribution of density of surface electron states on energy were calculated. The connections between conditions of heterojunction fabrication and their electronic properties are clarified. 1999 Article Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 73.20.D, 81.15.F http://dspace.nbuv.gov.ua/handle/123456789/119107 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
description	For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto substrates situated at a distance from the target and onto the plane of target were studied. The temperature dependencies of concentration of charge carriers captured in the traps in the heterojunction interface, and of distribution of density of surface electron states on energy were calculated. The connections between conditions of heterojunction fabrication and their electronic properties are clarified.
format	Article
author	Kaganovich, E.B. Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V.
spellingShingle	Kaganovich, E.B. Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V. Interface electronic properties of eterojunctions based on nanocrystalline silicon Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet	Kaganovich, E.B. Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V.
author_sort	Kaganovich, E.B.
title	Interface electronic properties of eterojunctions based on nanocrystalline silicon
title_short	Interface electronic properties of eterojunctions based on nanocrystalline silicon
title_full	Interface electronic properties of eterojunctions based on nanocrystalline silicon
title_fullStr	Interface electronic properties of eterojunctions based on nanocrystalline silicon
title_full_unstemmed	Interface electronic properties of eterojunctions based on nanocrystalline silicon
title_sort	interface electronic properties of eterojunctions based on nanocrystalline silicon
publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate	1999
url	http://dspace.nbuv.gov.ua/handle/123456789/119107
citation_txt	Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ.
series	Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv	AT kaganovicheb interfaceelectronicpropertiesofeterojunctionsbasedonnanocrystallinesilicon AT kirillovasi interfaceelectronicpropertiesofeterojunctionsbasedonnanocrystallinesilicon AT manoiloveg interfaceelectronicpropertiesofeterojunctionsbasedonnanocrystallinesilicon AT primachenkove interfaceelectronicpropertiesofeterojunctionsbasedonnanocrystallinesilicon AT svechnikovsv interfaceelectronicpropertiesofeterojunctionsbasedonnanocrystallinesilicon
first_indexed	2023-10-18T20:33:48Z
last_indexed	2023-10-18T20:33:48Z
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Interface electronic properties of eterojunctions based on nanocrystalline silicon

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