Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films
The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the r...
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| Дата: | 2004 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119117 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films / P.A. Gentsar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 240-242. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119117 |
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dspace |
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irk-123456789-1191172017-06-05T03:02:32Z Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films Gentsar, P.A. Kudryavtsev, A.A. The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the room temperature. The authors observed splitting the low-energy extremum after irradiation. The decrease in internal mechanical strains inside the films as a result of gamma irradiation was estimated via changes of the electron transition energy and collision parameter of widening. Also estimated is the time of charge carrier energy relaxation after irradiation. 2004 Article Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films / P.A. Gentsar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 240-242. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.20; 78.66 http://dspace.nbuv.gov.ua/handle/123456789/119117 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the room temperature. The authors observed splitting the low-energy extremum after irradiation. The decrease in internal mechanical strains inside the films as a result of gamma irradiation was estimated via changes of the electron transition energy and collision parameter of widening. Also estimated is the time of charge carrier energy relaxation after irradiation. |
| format |
Article |
| author |
Gentsar, P.A. Kudryavtsev, A.A. |
| spellingShingle |
Gentsar, P.A. Kudryavtsev, A.A. Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gentsar, P.A. Kudryavtsev, A.A. |
| author_sort |
Gentsar, P.A. |
| title |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_short |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_full |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_fullStr |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_full_unstemmed |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_sort |
radiation-stimulated relaxation of internal mechanical straines in homoepitaxial gap films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119117 |
| citation_txt |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films / P.A. Gentsar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 240-242. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT gentsarpa radiationstimulatedrelaxationofinternalmechanicalstrainesinhomoepitaxialgapfilms AT kudryavtsevaa radiationstimulatedrelaxationofinternalmechanicalstrainesinhomoepitaxialgapfilms |
| first_indexed |
2023-10-18T20:33:44Z |
| last_indexed |
2023-10-18T20:33:44Z |
| _version_ |
1796150526180589568 |