2025-02-23T00:20:15-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119120%22&qt=morelikethis&rows=5
2025-02-23T00:20:15-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119120%22&qt=morelikethis&rows=5
2025-02-23T00:20:15-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T00:20:15-05:00 DEBUG: Deserialized SOLR response
Partial polarization switching in ferroelectrics-semiconductors with charged defects

Partial polarization switching in ferroelectrics-semiconductors with charged defects

We propose the phenomenological description of ferroelectric disordering caused by charged defects in ferroelectric-semiconductors. The good agreement between the obtained experimental results for PZT films and theoretical calculations has been shown. We suppose that proportional to the averaged ch...

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Bibliographic Details
Main Authors: Morozovska, A.N., Eliseev, E.A., Cattan, E., Remiens, D.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119120
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2025-02-23T00:20:15-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119120%22&qt=morelikethis
2025-02-23T00:20:15-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119120%22&qt=morelikethis
2025-02-23T00:20:15-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T00:20:15-05:00 DEBUG: Deserialized SOLR response

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