Partial polarization switching in ferroelectrics-semiconductors with charged defects
We propose the phenomenological description of ferroelectric disordering caused by charged defects in ferroelectric-semiconductors. The good agreement between the obtained experimental results for PZT films and theoretical calculations has been shown. We suppose that proportional to the averaged ch...
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| Date: | 2004 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119120 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Partial polarization switching in ferroelectrics-semiconductors with charged defects / A.N. Morozovska, E.A. Eliseev, E. Cattan, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 251-262. — Бібліогр.: 25 назв. — англ. |