Paramagnetic defects related to photoluminescence in SiOx films

Paramagnetic defects related to photoluminescence in SiOx films

The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered at g = 2.0040, which is explained by the presence of a variety of dangling bo...

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Дата:2004
Автори: Rudko, G.Yu., Vorona, I.P., Indutnyy, I.Z., Ishchenko, S.S., Shepeliavyi, P.E., Yukhymchuk, V.O.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119207
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Paramagnetic defects related to photoluminescence in SiOx films / G.Yu. Rudko, I.P. Vorona, I.Z. Indutnyy, S.S. Ishchenko, P.E. Shepeliavyi, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 400-403. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1192072017-06-06T03:03:14Z Paramagnetic defects related to photoluminescence in SiOx films Rudko, G.Yu. Vorona, I.P. Indutnyy, I.Z. Ishchenko, S.S. Shepeliavyi, P.E. Yukhymchuk, V.O. The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered at g = 2.0040, which is explained by the presence of a variety of dangling bonds •Si = SiyO₃–y. The annealing at 750 ⁰C causes the formation of amorphous silicon inclusions in SiOx matrix, appearance of the photoluminescence peaked at ~ 1.8 eV and shift of the EPR line to the low field range. The latter implies the preferable annealing of the paramagnetic defects in the regions of the sample with higher concentration of oxygen. The optically detected magnetic resonance studies show that these defects are not responsible for the luminescence; they are the centers of nonradiative recombination, but the efficiency of photoluminescence quenching due to these defects is rather low. 2004 Article Paramagnetic defects related to photoluminescence in SiOx films / G.Yu. Rudko, I.P. Vorona, I.Z. Indutnyy, S.S. Ishchenko, P.E. Shepeliavyi, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 400-403. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 76.70.Hb, 78.55.Hx, 78.66.Sq http://dspace.nbuv.gov.ua/handle/123456789/119207 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered at g = 2.0040, which is explained by the presence of a variety of dangling bonds •Si = SiyO₃–y. The annealing at 750 ⁰C causes the formation of amorphous silicon inclusions in SiOx matrix, appearance of the photoluminescence peaked at ~ 1.8 eV and shift of the EPR line to the low field range. The latter implies the preferable annealing of the paramagnetic defects in the regions of the sample with higher concentration of oxygen. The optically detected magnetic resonance studies show that these defects are not responsible for the luminescence; they are the centers of nonradiative recombination, but the efficiency of photoluminescence quenching due to these defects is rather low.
format Article
author Rudko, G.Yu.
Vorona, I.P.
Indutnyy, I.Z.
Ishchenko, S.S.
Shepeliavyi, P.E.
Yukhymchuk, V.O.
spellingShingle Rudko, G.Yu.
Vorona, I.P.
Indutnyy, I.Z.
Ishchenko, S.S.
Shepeliavyi, P.E.
Yukhymchuk, V.O.
Paramagnetic defects related to photoluminescence in SiOx films
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Rudko, G.Yu.
Vorona, I.P.
Indutnyy, I.Z.
Ishchenko, S.S.
Shepeliavyi, P.E.
Yukhymchuk, V.O.
author_sort Rudko, G.Yu.
title Paramagnetic defects related to photoluminescence in SiOx films
title_short Paramagnetic defects related to photoluminescence in SiOx films
title_full Paramagnetic defects related to photoluminescence in SiOx films
title_fullStr Paramagnetic defects related to photoluminescence in SiOx films
title_full_unstemmed Paramagnetic defects related to photoluminescence in SiOx films
title_sort paramagnetic defects related to photoluminescence in siox films
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/119207
citation_txt Paramagnetic defects related to photoluminescence in SiOx films / G.Yu. Rudko, I.P. Vorona, I.Z. Indutnyy, S.S. Ishchenko, P.E. Shepeliavyi, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 400-403. — Бібліогр.: 9 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT rudkogyu paramagneticdefectsrelatedtophotoluminescenceinsioxfilms
AT voronaip paramagneticdefectsrelatedtophotoluminescenceinsioxfilms
AT indutnyyiz paramagneticdefectsrelatedtophotoluminescenceinsioxfilms
AT ishchenkoss paramagneticdefectsrelatedtophotoluminescenceinsioxfilms
AT shepeliavyipe paramagneticdefectsrelatedtophotoluminescenceinsioxfilms
AT yukhymchukvo paramagneticdefectsrelatedtophotoluminescenceinsioxfilms
first_indexed 2023-10-18T20:34:01Z
last_indexed 2023-10-18T20:34:01Z
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