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Paramagnetic defects related to photoluminescence in SiOx films

Paramagnetic defects related to photoluminescence in SiOx films

The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered at g = 2.0040, which is explained by the presence of a variety of dangling bo...

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Bibliographic Details
Main Authors: Rudko, G.Yu., Vorona, I.P., Indutnyy, I.Z., Ishchenko, S.S., Shepeliavyi, P.E., Yukhymchuk, V.O.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119207
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http://dspace.nbuv.gov.ua/handle/123456789/119207

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