Photoelectrical characteristics of two-dimensional macroporous silicon structures

Photoelectrical characteristics of two-dimensional macroporous silicon structures

Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection...

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Бібліографічні деталі
Дата:2004
Автори: Karachevtseva, L.A., Onischenko, V.F., Karas, M.I., Dandur’yants, O.I., Sizov, F.F., Stronska, O.J.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119227
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119227
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spelling irk-123456789-1192272017-06-06T03:03:21Z Photoelectrical characteristics of two-dimensional macroporous silicon structures Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection by structures of macroporous silicon are explained by formation of the plasmon type surface polaritons. Photoconductivity bands correlate with maxima of intrinsic and impurity light absorption. The change in the photoconductivity value is mainly determined by the growth of the electron mobility. 2004 Article Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 71.25.Rk, 81.60Cp http://dspace.nbuv.gov.ua/handle/123456789/119227 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection by structures of macroporous silicon are explained by formation of the plasmon type surface polaritons. Photoconductivity bands correlate with maxima of intrinsic and impurity light absorption. The change in the photoconductivity value is mainly determined by the growth of the electron mobility.
format Article
author Karachevtseva, L.A.
Onischenko, V.F.
Karas, M.I.
Dandur’yants, O.I.
Sizov, F.F.
Stronska, O.J.
spellingShingle Karachevtseva, L.A.
Onischenko, V.F.
Karas, M.I.
Dandur’yants, O.I.
Sizov, F.F.
Stronska, O.J.
Photoelectrical characteristics of two-dimensional macroporous silicon structures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Karachevtseva, L.A.
Onischenko, V.F.
Karas, M.I.
Dandur’yants, O.I.
Sizov, F.F.
Stronska, O.J.
author_sort Karachevtseva, L.A.
title Photoelectrical characteristics of two-dimensional macroporous silicon structures
title_short Photoelectrical characteristics of two-dimensional macroporous silicon structures
title_full Photoelectrical characteristics of two-dimensional macroporous silicon structures
title_fullStr Photoelectrical characteristics of two-dimensional macroporous silicon structures
title_full_unstemmed Photoelectrical characteristics of two-dimensional macroporous silicon structures
title_sort photoelectrical characteristics of two-dimensional macroporous silicon structures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/119227
citation_txt Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT karasmi photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures
AT danduryantsoi photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures
AT sizovff photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures
AT stronskaoj photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures
first_indexed 2023-10-18T20:34:04Z
last_indexed 2023-10-18T20:34:04Z
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