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Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed. These factors are: - dopant and residual impuritie...

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Main Authors: Baranskii, P.I., Babich, V.M., Venger, E.F.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119232
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spelling irk-123456789-1192322017-06-06T03:04:06Z Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors Baranskii, P.I. Babich, V.M. Venger, E.F. Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed. These factors are: - dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type), - electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction. Keywords: electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction. 2001 Article Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 61.72.T, 71.55, 72.80.P http://dspace.nbuv.gov.ua/handle/123456789/119232 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed. These factors are: - dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type), - electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction. Keywords: electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction.
format Article
author Baranskii, P.I.
Babich, V.M.
Venger, E.F.
spellingShingle Baranskii, P.I.
Babich, V.M.
Venger, E.F.
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Baranskii, P.I.
Babich, V.M.
Venger, E.F.
author_sort Baranskii, P.I.
title Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
title_short Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
title_full Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
title_fullStr Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
title_full_unstemmed Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
title_sort development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2001
url http://dspace.nbuv.gov.ua/handle/123456789/119232
citation_txt Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT babichvm developmentofthephysicalinsightintothenatureofthefactorsthatcontrolelectrophysicalandotherpropertiesofsemiconductors
AT vengeref developmentofthephysicalinsightintothenatureofthefactorsthatcontrolelectrophysicalandotherpropertiesofsemiconductors
first_indexed 2023-10-18T20:34:04Z
last_indexed 2023-10-18T20:34:04Z
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