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Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed. These factors are: - dopant and residual impuritie...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119232 |
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irk-123456789-1192322017-06-06T03:04:06Z Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors Baranskii, P.I. Babich, V.M. Venger, E.F. Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed. These factors are: - dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type), - electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction. Keywords: electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction. 2001 Article Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 61.72.T, 71.55, 72.80.P http://dspace.nbuv.gov.ua/handle/123456789/119232 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
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Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed.
These factors are:
- dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type),
- electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction.
Keywords: electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction. |
format |
Article |
author |
Baranskii, P.I. Babich, V.M. Venger, E.F. |
spellingShingle |
Baranskii, P.I. Babich, V.M. Venger, E.F. Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Baranskii, P.I. Babich, V.M. Venger, E.F. |
author_sort |
Baranskii, P.I. |
title |
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
title_short |
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
title_full |
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
title_fullStr |
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
title_full_unstemmed |
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
title_sort |
development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2001 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/119232 |
citation_txt |
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT baranskiipi developmentofthephysicalinsightintothenatureofthefactorsthatcontrolelectrophysicalandotherpropertiesofsemiconductors AT babichvm developmentofthephysicalinsightintothenatureofthefactorsthatcontrolelectrophysicalandotherpropertiesofsemiconductors AT vengeref developmentofthephysicalinsightintothenatureofthefactorsthatcontrolelectrophysicalandotherpropertiesofsemiconductors |
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2023-10-18T20:34:04Z |
last_indexed |
2023-10-18T20:34:04Z |
_version_ |
1796150541003259904 |