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2025-02-22T10:28:58-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T10:28:58-05:00 DEBUG: Deserialized SOLR response
Electronic properties of silicon surface at different oxide film conditions

Electronic properties of silicon surface at different oxide film conditions

We used measurements of temperature and electric field dependencies of surface photovoltage to study electronic properties of (100) n-silicon surface after its thermal and chemical oxidation, as well as after oxide films removal in HF. Measurements of surface photovoltage vs temperature curves revea...

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Bibliographic Details
Main Authors: Kirillova, S.I., Primachenko, V.E., Venger, E.F., Chernobai, V.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119235
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http://dspace.nbuv.gov.ua/handle/123456789/119235

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