Influence of structural defects on photoconductivity of zinc diphosphide
Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high tempera...
Збережено в:
| Дата: | 2001 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119264 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119264 |
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| record_format |
dspace |
| spelling |
irk-123456789-1192642017-06-06T03:04:06Z Influence of structural defects on photoconductivity of zinc diphosphide Kudin, A.P. Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high temperature treatment (400oC) form band hn = 1.55-2.14 eV. Irradiation leads to the decrease of dark current and appearing of acceptor type level which can be annealed in the temperature interval 20-100⁰C. 2001 Article Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 61.72 http://dspace.nbuv.gov.ua/handle/123456789/119264 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied.
It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high temperature treatment (400oC) form band hn = 1.55-2.14 eV. Irradiation leads to the decrease of dark current and appearing of acceptor type level which can be annealed in the temperature interval 20-100⁰C. |
| format |
Article |
| author |
Kudin, A.P. Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. |
| spellingShingle |
Kudin, A.P. Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. Influence of structural defects on photoconductivity of zinc diphosphide Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kudin, A.P. Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. |
| author_sort |
Kudin, A.P. |
| title |
Influence of structural defects on photoconductivity of zinc diphosphide |
| title_short |
Influence of structural defects on photoconductivity of zinc diphosphide |
| title_full |
Influence of structural defects on photoconductivity of zinc diphosphide |
| title_fullStr |
Influence of structural defects on photoconductivity of zinc diphosphide |
| title_full_unstemmed |
Influence of structural defects on photoconductivity of zinc diphosphide |
| title_sort |
influence of structural defects on photoconductivity of zinc diphosphide |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119264 |
| citation_txt |
Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2023-10-18T20:34:09Z |
| last_indexed |
2023-10-18T20:34:09Z |
| _version_ |
1796150544068247552 |