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Spectral dependence of the photomagnetic effect in porous silicon

Spectral dependence of the photomagnetic effect in porous silicon

Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indica...

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Bibliographic Details
Main Authors: Vakulenko, O.V., Kondratenko, S.V., Serdega, B.K.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119265
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http://dspace.nbuv.gov.ua/handle/123456789/119265

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