Spectral dependence of the photomagnetic effect in porous silicon
Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indica...
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| Дата: | 2001 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119265 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119265 |
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dspace |
| spelling |
irk-123456789-1192652017-06-06T03:03:17Z Spectral dependence of the photomagnetic effect in porous silicon Vakulenko, O.V. Kondratenko, S.V. Serdega, B.K. Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indicates to the drift of the nonequilibrium charge carriers in the c-Si to the PS/c-Si boundary, that is presence of the increased spatial charge layer in c-Si. Relatively high value of the PME in the strong absorption region of the porous silicon indicates to the presence of the PME component caused by porous silicon material. 2001 Article Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 72.40. http://dspace.nbuv.gov.ua/handle/123456789/119265 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indicates to the drift of the nonequilibrium charge carriers in the c-Si to the PS/c-Si boundary, that is presence of the increased spatial charge layer in c-Si. Relatively high value of the PME in the strong absorption region of the porous silicon indicates to the presence of the PME component caused by porous silicon material. |
| format |
Article |
| author |
Vakulenko, O.V. Kondratenko, S.V. Serdega, B.K. |
| spellingShingle |
Vakulenko, O.V. Kondratenko, S.V. Serdega, B.K. Spectral dependence of the photomagnetic effect in porous silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vakulenko, O.V. Kondratenko, S.V. Serdega, B.K. |
| author_sort |
Vakulenko, O.V. |
| title |
Spectral dependence of the photomagnetic effect in porous silicon |
| title_short |
Spectral dependence of the photomagnetic effect in porous silicon |
| title_full |
Spectral dependence of the photomagnetic effect in porous silicon |
| title_fullStr |
Spectral dependence of the photomagnetic effect in porous silicon |
| title_full_unstemmed |
Spectral dependence of the photomagnetic effect in porous silicon |
| title_sort |
spectral dependence of the photomagnetic effect in porous silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119265 |
| citation_txt |
Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT vakulenkoov spectraldependenceofthephotomagneticeffectinporoussilicon AT kondratenkosv spectraldependenceofthephotomagneticeffectinporoussilicon AT serdegabk spectraldependenceofthephotomagneticeffectinporoussilicon |
| first_indexed |
2023-10-18T20:34:09Z |
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2023-10-18T20:34:09Z |
| _version_ |
1796150544173105152 |