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Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration
High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the integral heavy hole state density essentially depends on temperature. It can be ex...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119320 |
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irk-123456789-1193202017-06-07T03:03:10Z Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration Bogoboyashchyy, V.V. High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the integral heavy hole state density essentially depends on temperature. It can be explained using the conception of the non-parabolic band. The proposed model enabled to determine the differential state density in the band being based on the results of measurements. It was found that the heavy hole dispersion law at ε < 0.15 eV have the relativistic form in the framework of the measurements accuracy, where and eV for all studied compositions x. It was also shown that intrinsic electron concentration in CdTe at high temperatures (higher than 800 K), calculated with the found heavy hole state density, agrees quantitatively with known experimental data. 2001 Article Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration / V.V. Bogoboyashchyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 273-277. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 621.315.592.2; 535.343.2 http://dspace.nbuv.gov.ua/handle/123456789/119320 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the integral heavy hole state density essentially depends on temperature. It can be explained using the conception of the non-parabolic band. The proposed model enabled to determine the differential state density in the band being based on the results of measurements. It was found that the heavy hole dispersion law at ε < 0.15 eV have the relativistic form in the framework of the measurements accuracy, where and eV for all studied compositions x. It was also shown that intrinsic electron concentration in CdTe at high temperatures (higher than 800 K), calculated with the found heavy hole state density, agrees quantitatively with known experimental data. |
| format |
Article |
| author |
Bogoboyashchyy, V.V. |
| spellingShingle |
Bogoboyashchyy, V.V. Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bogoboyashchyy, V.V. |
| author_sort |
Bogoboyashchyy, V.V. |
| title |
Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_short |
Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_full |
Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_fullStr |
Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_full_unstemmed |
Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_sort |
density of heavy hole states of hg₁-xcdxte in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119320 |
| citation_txt |
Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration / V.V. Bogoboyashchyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 273-277. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT bogoboyashchyyvv densityofheavyholestatesofhg1xcdxteinanisotropicnonparabolicapproximationbyexactmeasurementsofelectronconcentration |
| first_indexed |
2023-10-18T20:34:17Z |
| last_indexed |
2023-10-18T20:34:17Z |
| _version_ |
1796150547880869888 |