Investigations of impurity gettering in multicrystalline silicon

The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of non-equilibrium...

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Дата:	2001
Автори:	Evtukh, A.A., Litovchenko, V.G., Oberemok, A.S., Popov, V.G., Rassamakin, Yu.V., Romanyuk, B.N., Volkov, S.G.
Формат:	Стаття
Мова:	English
Опубліковано:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Назва видання:	Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:	http://dspace.nbuv.gov.ua/handle/123456789/119322
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:	Investigations of impurity gettering in multicrystalline silicon / A.A. Evtukh, V.G. Litovchenko, A.S. Oberemok, V.G. Popov, Yu. V. Rassamakin, B.N. Romanyuk, S.G. Volkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 278-282. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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spelling	irk-123456789-1193222017-06-07T03:03:05Z Investigations of impurity gettering in multicrystalline silicon Evtukh, A.A. Litovchenko, V.G. Oberemok, A.S. Popov, V.G. Rassamakin, Yu.V. Romanyuk, B.N. Volkov, S.G. The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of non-equilibrium charge carriers). Getters formed by a silicon layer with a developed internal surface, and also combined getter (the mentioned layer covered with a thin film of aluminum) were used. It was shown that the efficiency of gettering depends on annealing temperature and character of Al depth distribution that, in turn, depends on the regimes of structurally modified silicon layer formation. The models of gettering that enabled us to explain obtained results are considered. 2001 Article Investigations of impurity gettering in multicrystalline silicon / A.A. Evtukh, V.G. Litovchenko, A.S. Oberemok, V.G. Popov, Yu. V. Rassamakin, B.N. Romanyuk, S.G. Volkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 278-282. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 84. 60. J http://dspace.nbuv.gov.ua/handle/123456789/119322 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
description	The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of non-equilibrium charge carriers). Getters formed by a silicon layer with a developed internal surface, and also combined getter (the mentioned layer covered with a thin film of aluminum) were used. It was shown that the efficiency of gettering depends on annealing temperature and character of Al depth distribution that, in turn, depends on the regimes of structurally modified silicon layer formation. The models of gettering that enabled us to explain obtained results are considered.
format	Article
author	Evtukh, A.A. Litovchenko, V.G. Oberemok, A.S. Popov, V.G. Rassamakin, Yu.V. Romanyuk, B.N. Volkov, S.G.
spellingShingle	Evtukh, A.A. Litovchenko, V.G. Oberemok, A.S. Popov, V.G. Rassamakin, Yu.V. Romanyuk, B.N. Volkov, S.G. Investigations of impurity gettering in multicrystalline silicon Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet	Evtukh, A.A. Litovchenko, V.G. Oberemok, A.S. Popov, V.G. Rassamakin, Yu.V. Romanyuk, B.N. Volkov, S.G.
author_sort	Evtukh, A.A.
title	Investigations of impurity gettering in multicrystalline silicon
title_short	Investigations of impurity gettering in multicrystalline silicon
title_full	Investigations of impurity gettering in multicrystalline silicon
title_fullStr	Investigations of impurity gettering in multicrystalline silicon
title_full_unstemmed	Investigations of impurity gettering in multicrystalline silicon
title_sort	investigations of impurity gettering in multicrystalline silicon
publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate	2001
url	http://dspace.nbuv.gov.ua/handle/123456789/119322
citation_txt	Investigations of impurity gettering in multicrystalline silicon / A.A. Evtukh, V.G. Litovchenko, A.S. Oberemok, V.G. Popov, Yu. V. Rassamakin, B.N. Romanyuk, S.G. Volkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 278-282. — Бібліогр.: 13 назв. — англ.
series	Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed	2023-10-18T20:34:17Z
last_indexed	2023-10-18T20:34:17Z
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Investigations of impurity gettering in multicrystalline silicon

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