Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) за авторством Parphenyuk, P.V., Evtukh, A.A.

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Nanostructuring the SiOₓ layers by using laser-induced self-organization за авторством Steblova, O.V., Fedorenko, L.L., Evtukh, A.A.

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The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers за авторством Solntsev, V.S., Gorbanyuk, T.I., Litovchenko, V.G., Evtukh, A.A.

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Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals за авторством Bratus, O.L., Evtukh, A.A., Steblova, O.V., Prokopchuk, V.M.

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Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing за авторством Bratus, O.L., Evtukh, A.A., Lytvyn, O.S., Voitovych, M.V., Yukhymchuk, V.О.

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Charge characteristics of the MOS structures with oxide films containing Si nanocrystals за авторством Begun, E.V., Bratus’, O.L., Evtukh, A.A., Kaganovich, E.B., Manoilov, E.G.

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Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface за авторством Parfenyuk, P.V., Evtukh, A.A., Korobchuk, I.M., Glotov, V.I., Strelchuk, V.V.

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Increase of planar homogeneity of multi-silicon structures by gettering treatments за авторством Litovchenko, V.G., Efremov, A.A., Evtukh, A.A., Rassamakin, Yu.V., Klyui, M.I., Kostylov, V.P.

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Investigations of impurity gettering in multicrystalline silicon за авторством Evtukh, A.A., Litovchenko, V.G., Oberemok, A.S., Popov, V.G., Rassamakin, Yu.V., Romanyuk, B.N., Volkov, S.G.

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Field emission of electrons from laser produced silicon tip arrays за авторством Evtukh, A.A., Kaganovich, E.B., Litovchenko, V.G., Litvin, Yu.M., Fedin, D.V., Manoilov, E.G., Svechnikov, S.V.

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