Interface roughness induced intrasubband scattering in a quantum well under an electric field
Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the...
Збережено в:
| Дата: | 2002 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119564 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119564 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1195642017-06-08T03:06:38Z Interface roughness induced intrasubband scattering in a quantum well under an electric field Ibragimov, G.B. Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs as compared with those for the zero-field case. 2002 Article Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 68.65,73.20.D http://dspace.nbuv.gov.ua/handle/123456789/119564 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs as compared with those for the zero-field case. |
| format |
Article |
| author |
Ibragimov, G.B. |
| spellingShingle |
Ibragimov, G.B. Interface roughness induced intrasubband scattering in a quantum well under an electric field Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Ibragimov, G.B. |
| author_sort |
Ibragimov, G.B. |
| title |
Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_short |
Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_full |
Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_fullStr |
Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_full_unstemmed |
Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_sort |
interface roughness induced intrasubband scattering in a quantum well under an electric field |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119564 |
| citation_txt |
Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT ibragimovgb interfaceroughnessinducedintrasubbandscatteringinaquantumwellunderanelectricfield |
| first_indexed |
2023-10-18T20:34:52Z |
| last_indexed |
2023-10-18T20:34:52Z |
| _version_ |
1796150573817397248 |