Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures

Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures

The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth temperature region 773-873 K by the liquid phase epitaxy technique at a program...

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Бібліографічні деталі
Дата:2002
Автори: Tkachuk, A.I., Tsarenko, O.N., Ryabets, S.I.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119567
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures / A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 51-57. — Бібліогр.: 20 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119567
record_format dspace
spelling irk-123456789-1195672017-06-08T03:02:28Z Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures Tkachuk, A.I. Tsarenko, O.N. Ryabets, S.I. The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth temperature region 773-873 K by the liquid phase epitaxy technique at a programmatic refrigeration rate of 0.1-0.2 K/min and a temperature reduction range of DT=5-10 K. The laboratory methodology of the production of Cu/δ-layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ /In Schottky barrier structures by thermal vacuum deposition has been developed. The current- and farad-voltage characteristics of these structures have been measured at the 77 K, and the dependence of the diode electro-physical properties on the δ-layer width has been studied. 2002 Article Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures / A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 51-57. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 73.20.-r, 73.30.+y,73.40.Lq http://dspace.nbuv.gov.ua/handle/123456789/119567 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth temperature region 773-873 K by the liquid phase epitaxy technique at a programmatic refrigeration rate of 0.1-0.2 K/min and a temperature reduction range of DT=5-10 K. The laboratory methodology of the production of Cu/δ-layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ /In Schottky barrier structures by thermal vacuum deposition has been developed. The current- and farad-voltage characteristics of these structures have been measured at the 77 K, and the dependence of the diode electro-physical properties on the δ-layer width has been studied.
format Article
author Tkachuk, A.I.
Tsarenko, O.N.
Ryabets, S.I.
spellingShingle Tkachuk, A.I.
Tsarenko, O.N.
Ryabets, S.I.
Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Tkachuk, A.I.
Tsarenko, O.N.
Ryabets, S.I.
author_sort Tkachuk, A.I.
title Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
title_short Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
title_full Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
title_fullStr Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
title_full_unstemmed Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures
title_sort production and investigation of cu/thin intermediate tunnel-transparent dielectric oxide layer/n-pb₀.₉₃₅sn₀.₀₆₅te₀.₂₄₃se₀.₇₅₇/in schottky barrier structures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2002
url http://dspace.nbuv.gov.ua/handle/123456789/119567
citation_txt Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures / A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 51-57. — Бібліогр.: 20 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT ryabetssi productionandinvestigationofcuthinintermediatetunneltransparentdielectricoxidelayernpb0935sn0065te0243se0757inschottkybarrierstructures
first_indexed 2023-10-18T20:34:53Z
last_indexed 2023-10-18T20:34:53Z
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