Efficiency limit for diffusion silicon solar cells at concentrated illumination
A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge c...
Збережено в:
| Дата: | 1999 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119858 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge carriers in heavily doped regions in AM0 conditions was taken into account. It was found that the efficiency of photoconversion η at K ≈ 100 can be as high as 27%. |
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