Efficiency limit for diffusion silicon solar cells at concentrated illumination
A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge c...
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| Дата: | 1999 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119858 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119858 |
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dspace |
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irk-123456789-1198582017-06-11T03:03:43Z Efficiency limit for diffusion silicon solar cells at concentrated illumination Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Serba, A.A. A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge carriers in heavily doped regions in AM0 conditions was taken into account. It was found that the efficiency of photoconversion η at K ≈ 100 can be as high as 27%. 1999 Article Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 84.60.J, 72.20.J http://dspace.nbuv.gov.ua/handle/123456789/119858 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge carriers in heavily doped regions in AM0 conditions was taken into account. It was found that the efficiency of photoconversion η at K ≈ 100 can be as high as 27%. |
| format |
Article |
| author |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Serba, A.A. |
| spellingShingle |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Serba, A.A. Efficiency limit for diffusion silicon solar cells at concentrated illumination Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Serba, A.A. |
| author_sort |
Gorban, A.P. |
| title |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_short |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_full |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_fullStr |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_full_unstemmed |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_sort |
efficiency limit for diffusion silicon solar cells at concentrated illumination |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119858 |
| citation_txt |
Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:35:35Z |
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