Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr
A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5E → 5T2 transition in the 3d shell of the Cr²⁺ ion. This emission stems from intraband indirect transitions of hot electrons....
Збережено в:
| Дата: | 2005 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119917 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Momentum r elaxation of h ot e lectrons d uring r adiative i ntraband i ndirect t ransitions in ZnS:Cr / N.A. Vlasenko, A.E. Belyaev, Z.L. Denisova, Ya.F. Kononets, A.V. Komarov, L.I. Veligura // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 25-29. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119917 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1199172017-06-11T03:03:08Z Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr Vlasenko, N.A. Belyaev, A.E. Denisova, Z.L. Kononets, Ya.F. Komarov, A.V. Veligura, L.I. A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5E → 5T2 transition in the 3d shell of the Cr²⁺ ion. This emission stems from intraband indirect transitions of hot electrons. The comparison between experimental intensity spectral dependence and the same dependence calculated for different mechanisms of the momentum relaxation shows that the scattering on charged impurities takes place during this emission. The Cr+ ions existing in ZnS:Cr in addition to predominant Cr²⁺ ions serve as scattering charge centers. This is confirmed by study of the magnetic field (H) effect on the intensity (I) of the hot electron emission at 4.2 K. The experimental dependence I(H) coincides with the calculated magnetic field dependence of the exchange scattering cross-section of Cr⁺ ion with the spin 5/2 and g-factor 2. This result also indicates that both the Coulomb interaction with Cr+ ions and the exchange scattering on them present during the hot electron emission in the ZnS:Cr TFELS. 2005 Article Momentum r elaxation of h ot e lectrons d uring r adiative i ntraband i ndirect t ransitions in ZnS:Cr / N.A. Vlasenko, A.E. Belyaev, Z.L. Denisova, Ya.F. Kononets, A.V. Komarov, L.I. Veligura // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 25-29. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 78.60.Fi; 71.55.Gs; 72.10.-d; 71.70.Gm; 78.20.Ls http://dspace.nbuv.gov.ua/handle/123456789/119917 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5E → 5T2 transition in the 3d shell of the Cr²⁺ ion. This emission stems from intraband indirect transitions of hot electrons. The comparison between experimental intensity spectral dependence and the same dependence calculated for different mechanisms of the momentum relaxation shows that the scattering on charged impurities takes place during this emission. The Cr+ ions existing in ZnS:Cr in addition to predominant Cr²⁺ ions serve as scattering charge centers. This is confirmed by study of the magnetic field (H) effect on the intensity (I) of the hot electron emission at 4.2 K. The experimental dependence I(H) coincides with the calculated magnetic field dependence of the exchange scattering cross-section of Cr⁺ ion with the spin 5/2 and g-factor 2. This result also indicates that both the Coulomb interaction with Cr+ ions and the exchange scattering on them present during the hot electron emission in the ZnS:Cr TFELS. |
| format |
Article |
| author |
Vlasenko, N.A. Belyaev, A.E. Denisova, Z.L. Kononets, Ya.F. Komarov, A.V. Veligura, L.I. |
| spellingShingle |
Vlasenko, N.A. Belyaev, A.E. Denisova, Z.L. Kononets, Ya.F. Komarov, A.V. Veligura, L.I. Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlasenko, N.A. Belyaev, A.E. Denisova, Z.L. Kononets, Ya.F. Komarov, A.V. Veligura, L.I. |
| author_sort |
Vlasenko, N.A. |
| title |
Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr |
| title_short |
Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr |
| title_full |
Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr |
| title_fullStr |
Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr |
| title_full_unstemmed |
Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr |
| title_sort |
momentum relaxation of hot electrons during radiative intraband indirect transitions in zns:cr |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119917 |
| citation_txt |
Momentum r elaxation of h ot e lectrons d uring r adiative i ntraband i ndirect t ransitions in ZnS:Cr / N.A. Vlasenko, A.E. Belyaev, Z.L. Denisova, Ya.F. Kononets, A.V. Komarov, L.I. Veligura // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 25-29. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT vlasenkona momentumrelaxationofhotelectronsduringradiativeintrabandindirecttransitionsinznscr AT belyaevae momentumrelaxationofhotelectronsduringradiativeintrabandindirecttransitionsinznscr AT denisovazl momentumrelaxationofhotelectronsduringradiativeintrabandindirecttransitionsinznscr AT kononetsyaf momentumrelaxationofhotelectronsduringradiativeintrabandindirecttransitionsinznscr AT komarovav momentumrelaxationofhotelectronsduringradiativeintrabandindirecttransitionsinznscr AT veligurali momentumrelaxationofhotelectronsduringradiativeintrabandindirecttransitionsinznscr |
| first_indexed |
2023-10-18T20:35:45Z |
| last_indexed |
2023-10-18T20:35:45Z |
| _version_ |
1796150611616464896 |