Growth of graphene on 6H-SiC by molecular dynamics simulation
Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simula...
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| Видавець: | Інститут фізики конденсованих систем НАН України |
|---|---|
| Дата: | 2011 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2011
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120056 |
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| Цитувати: | Growth of graphene on 6H-SiC by molecular dynamics simulation / N. Jakse, R. Arifin, S.K. Lai // Condensed Matter Physics. — 2011. — Т. 14, № 4. — С. 43802:1-7. — Бібліогр.: 12 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1200562017-06-11T03:05:10Z Growth of graphene on 6H-SiC by molecular dynamics simulation Jakse, N. Arifin, R. Lai, S.K. Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated characteristics of graphene, its carbon-carbon bond-length, pair correlation function, and binding energy. Для того, щоб дослiдити епiтаксiальний рiст графену на пiдкладцi 6H–SiC(0001) здiйснено симуляцiї методом класичної молекулярної динамiки. Знайдено iснування порогу температури вiдпалу, вище якої спостерiгається формування на пiдкладцi структури графену. Для того, щоб перевiрити чутливiсть результатiв симуляцiй, ми тестуємо два емпiричних потенцiали i оцiнюємо їхню надiйнiсть шляхом розрахунку характеристик графену, довжини зв’язку вуглець-вуглець, парної кореляцiйної функцiї та енергiї зв’язку. 2011 Article Growth of graphene on 6H-SiC by molecular dynamics simulation / N. Jakse, R. Arifin, S.K. Lai // Condensed Matter Physics. — 2011. — Т. 14, № 4. — С. 43802:1-7. — Бібліогр.: 12 назв. — англ. 1607-324X PACS: 81.05.ue 31.15.xv 68.55.A- DOI:10.5488/CMP.14.43802 arXiv:1202.4846 http://dspace.nbuv.gov.ua/handle/123456789/120056 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated characteristics of graphene, its carbon-carbon bond-length, pair correlation function, and binding energy. |
| format |
Article |
| author |
Jakse, N. Arifin, R. Lai, S.K. |
| spellingShingle |
Jakse, N. Arifin, R. Lai, S.K. Growth of graphene on 6H-SiC by molecular dynamics simulation Condensed Matter Physics |
| author_facet |
Jakse, N. Arifin, R. Lai, S.K. |
| author_sort |
Jakse, N. |
| title |
Growth of graphene on 6H-SiC by molecular dynamics simulation |
| title_short |
Growth of graphene on 6H-SiC by molecular dynamics simulation |
| title_full |
Growth of graphene on 6H-SiC by molecular dynamics simulation |
| title_fullStr |
Growth of graphene on 6H-SiC by molecular dynamics simulation |
| title_full_unstemmed |
Growth of graphene on 6H-SiC by molecular dynamics simulation |
| title_sort |
growth of graphene on 6h-sic by molecular dynamics simulation |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120056 |
| citation_txt |
Growth of graphene on 6H-SiC by molecular dynamics simulation / N. Jakse, R. Arifin, S.K. Lai // Condensed Matter Physics. — 2011. — Т. 14, № 4. — С. 43802:1-7. — Бібліогр.: 12 назв. — англ. |
| series |
Condensed Matter Physics |
| work_keys_str_mv |
AT jaksen growthofgrapheneon6hsicbymoleculardynamicssimulation AT arifinr growthofgrapheneon6hsicbymoleculardynamicssimulation AT laisk growthofgrapheneon6hsicbymoleculardynamicssimulation |
| first_indexed |
2023-10-18T20:36:06Z |
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2023-10-18T20:36:06Z |
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1796150627249684480 |