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Growth of graphene on 6H-SiC by molecular dynamics simulation
Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simula...
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| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики конденсованих систем НАН України
2011
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| Series: | Condensed Matter Physics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120056 |
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