Photovoltaic effect in p–SiC/p–Si heterojunction

• Дата: 2013
• Автори: Kozlovskyi, A.A., Semenov, A.V., Puzikov, V.M.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2013
• Назва видання: Functional Materials
• Теми: Characterization and properties
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/120066
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ.

The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and th...