Photovoltaic effect in p–SiC/p–Si heterojunction

The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and th...

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Бібліографічні деталі
Дата:2013
Автори: Kozlovskyi, A.A., Semenov, A.V., Puzikov, V.M.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2013
Назва видання:Functional Materials
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120066
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1200662017-06-12T03:03:16Z Photovoltaic effect in p–SiC/p–Si heterojunction Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. Characterization and properties The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction. 2013 Article Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.02.217 http://dspace.nbuv.gov.ua/handle/123456789/120066 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Characterization and properties
Characterization and properties
spellingShingle Characterization and properties
Characterization and properties
Kozlovskyi, A.A.
Semenov, A.V.
Puzikov, V.M.
Photovoltaic effect in p–SiC/p–Si heterojunction
Functional Materials
description The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction.
format Article
author Kozlovskyi, A.A.
Semenov, A.V.
Puzikov, V.M.
author_facet Kozlovskyi, A.A.
Semenov, A.V.
Puzikov, V.M.
author_sort Kozlovskyi, A.A.
title Photovoltaic effect in p–SiC/p–Si heterojunction
title_short Photovoltaic effect in p–SiC/p–Si heterojunction
title_full Photovoltaic effect in p–SiC/p–Si heterojunction
title_fullStr Photovoltaic effect in p–SiC/p–Si heterojunction
title_full_unstemmed Photovoltaic effect in p–SiC/p–Si heterojunction
title_sort photovoltaic effect in p–sic/p–si heterojunction
publisher НТК «Інститут монокристалів» НАН України
publishDate 2013
topic_facet Characterization and properties
url http://dspace.nbuv.gov.ua/handle/123456789/120066
citation_txt Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ.
series Functional Materials
work_keys_str_mv AT kozlovskyiaa photovoltaiceffectinpsicpsiheterojunction
AT semenovav photovoltaiceffectinpsicpsiheterojunction
AT puzikovvm photovoltaiceffectinpsicpsiheterojunction
first_indexed 2023-10-18T20:36:08Z
last_indexed 2023-10-18T20:36:08Z
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