Photovoltaic effect in p–SiC/p–Si heterojunction
The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and th...
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Дата: | 2013 |
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Автори: | , , |
Формат: | Стаття |
Мова: | English |
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НТК «Інститут монокристалів» НАН України
2013
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Назва видання: | Functional Materials |
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Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120066 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ. |
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irk-123456789-1200662017-06-12T03:03:16Z Photovoltaic effect in p–SiC/p–Si heterojunction Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. Characterization and properties The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction. 2013 Article Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.02.217 http://dspace.nbuv.gov.ua/handle/123456789/120066 en Functional Materials НТК «Інститут монокристалів» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
topic |
Characterization and properties Characterization and properties |
spellingShingle |
Characterization and properties Characterization and properties Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. Photovoltaic effect in p–SiC/p–Si heterojunction Functional Materials |
description |
The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction. |
format |
Article |
author |
Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. |
author_facet |
Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. |
author_sort |
Kozlovskyi, A.A. |
title |
Photovoltaic effect in p–SiC/p–Si heterojunction |
title_short |
Photovoltaic effect in p–SiC/p–Si heterojunction |
title_full |
Photovoltaic effect in p–SiC/p–Si heterojunction |
title_fullStr |
Photovoltaic effect in p–SiC/p–Si heterojunction |
title_full_unstemmed |
Photovoltaic effect in p–SiC/p–Si heterojunction |
title_sort |
photovoltaic effect in p–sic/p–si heterojunction |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2013 |
topic_facet |
Characterization and properties |
url |
http://dspace.nbuv.gov.ua/handle/123456789/120066 |
citation_txt |
Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
AT kozlovskyiaa photovoltaiceffectinpsicpsiheterojunction AT semenovav photovoltaiceffectinpsicpsiheterojunction AT puzikovvm photovoltaiceffectinpsicpsiheterojunction |
first_indexed |
2023-10-18T20:36:08Z |
last_indexed |
2023-10-18T20:36:08Z |
_version_ |
1796150628307697664 |