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Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire
Physicochemical conditions and polishing suspension composition were established for polishing of AlN/sapphire templates obtained by thermochemical nitridation of sapphire. The use of the polishing suspension based on aerosil and KOH with pH 10.3 allowed to prepare the surface with a roughness Ra up...
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НТК «Інститут монокристалів» НАН України
2013
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Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120073 |
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irk-123456789-1200732017-06-12T03:02:53Z Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire Vovk, E.A. Budnikov, A.T. Nizhankovskyi, S.V. Kryvonogov, S.I. Krukhmalev, A.A. Dobrotvorskaya, M.V. Technology Physicochemical conditions and polishing suspension composition were established for polishing of AlN/sapphire templates obtained by thermochemical nitridation of sapphire. The use of the polishing suspension based on aerosil and KOH with pH 10.3 allowed to prepare the surface with a roughness Ra up to 1 nm. The morphology and element composition of AlN/sapphire surface at layer-by-layer removal of the nitridated layer were studied by the methods of atomic force microscopy and X-ray photoelectronic spectroscopy. 2013 Article Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire / E.A. Vovk, A.T. Budnikov, S.V. Nizhankovskyi, S.I. Kryvonogov, A.A. Krukhmalev, M.V. Dobrotvorskaya // Functional Materials. — 2013. — Т. 20, № 2. — С. 253-258. — Бібліогр.: 10 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.02.253 http://dspace.nbuv.gov.ua/handle/123456789/120073 en Functional Materials НТК «Інститут монокристалів» НАН України |
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Technology Technology Vovk, E.A. Budnikov, A.T. Nizhankovskyi, S.V. Kryvonogov, S.I. Krukhmalev, A.A. Dobrotvorskaya, M.V. Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire Functional Materials |
description |
Physicochemical conditions and polishing suspension composition were established for polishing of AlN/sapphire templates obtained by thermochemical nitridation of sapphire. The use of the polishing suspension based on aerosil and KOH with pH 10.3 allowed to prepare the surface with a roughness Ra up to 1 nm. The morphology and element composition of AlN/sapphire surface at layer-by-layer removal of the nitridated layer were studied by the methods of atomic force microscopy and X-ray photoelectronic spectroscopy. |
format |
Article |
author |
Vovk, E.A. Budnikov, A.T. Nizhankovskyi, S.V. Kryvonogov, S.I. Krukhmalev, A.A. Dobrotvorskaya, M.V. |
author_facet |
Vovk, E.A. Budnikov, A.T. Nizhankovskyi, S.V. Kryvonogov, S.I. Krukhmalev, A.A. Dobrotvorskaya, M.V. |
author_sort |
Vovk, E.A. |
title |
Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire |
title_short |
Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire |
title_full |
Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire |
title_fullStr |
Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire |
title_full_unstemmed |
Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire |
title_sort |
polishing of aln/sapphire substrates obtained by thermochemical nitridation of sapphire |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2013 |
topic_facet |
Technology |
url |
http://dspace.nbuv.gov.ua/handle/123456789/120073 |
citation_txt |
Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire / E.A. Vovk, A.T. Budnikov, S.V. Nizhankovskyi, S.I. Kryvonogov, A.A. Krukhmalev, M.V.
Dobrotvorskaya // Functional Materials. — 2013. — Т. 20, № 2. — С. 253-258. — Бібліогр.: 10 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
AT vovkea polishingofalnsapphiresubstratesobtainedbythermochemicalnitridationofsapphire AT budnikovat polishingofalnsapphiresubstratesobtainedbythermochemicalnitridationofsapphire AT nizhankovskyisv polishingofalnsapphiresubstratesobtainedbythermochemicalnitridationofsapphire AT kryvonogovsi polishingofalnsapphiresubstratesobtainedbythermochemicalnitridationofsapphire AT krukhmalevaa polishingofalnsapphiresubstratesobtainedbythermochemicalnitridationofsapphire AT dobrotvorskayamv polishingofalnsapphiresubstratesobtainedbythermochemicalnitridationofsapphire |
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2023-10-18T20:36:09Z |
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2023-10-18T20:36:09Z |
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1796150629049040896 |