Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation
The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate and electrical resistivity of the samples have been analysed before and after...
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| Дата: | 2000 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120232 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation / V.A. Gnatyuk, O.S. Gorodnychenko, P.O. Mozol, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 26-30. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1202322017-06-12T03:04:59Z Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation Gnatyuk, V.A. Gorodnychenko, O.S. Mozol, P.O. Vlasenko, O.I. The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate and electrical resistivity of the samples have been analysed before and after irradiation with laser pulses characterized by a wide range of energy densites. An increase in the photoconductivity and decrease in the surface recombination rate of the investigated crystals was attributed to cleaning of the crystal surface and to the laser-stimulated desorption and segregation of electrically active defects at sinks. A considerable reduction in the resistivity of GaAs and a shift of the maximum and of the red edge of the photoconductivity specrtrum of InSb crystals toward shorter wavelengths were observed after irradiation with laser pulses of energy density above the melting threshold. The reasons for the found phenomena have been determined and the mechanism of the action of laser-induced stress and shock waves on the structure and properties of the crystals has been discussed. 2000 Article Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation / V.A. Gnatyuk, O.S. Gorodnychenko, P.O. Mozol, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 26-30. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 72.20; 72.40; 73.20; 42.62 http://dspace.nbuv.gov.ua/handle/123456789/120232 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate and electrical resistivity of the samples have been analysed before and after irradiation with laser pulses characterized by a wide range of energy densites. An increase in the photoconductivity and decrease in the surface recombination rate of the investigated crystals was attributed to cleaning of the crystal surface and to the laser-stimulated desorption and segregation of electrically active defects at sinks. A considerable reduction in the resistivity of GaAs and a shift of the maximum and of the red edge of the photoconductivity specrtrum of InSb crystals toward shorter wavelengths were observed after irradiation with laser pulses of energy density above the melting threshold. The reasons for the found phenomena have been determined and the mechanism of the action of laser-induced stress and shock waves on the structure and properties of the crystals has been discussed. |
| format |
Article |
| author |
Gnatyuk, V.A. Gorodnychenko, O.S. Mozol, P.O. Vlasenko, O.I. |
| spellingShingle |
Gnatyuk, V.A. Gorodnychenko, O.S. Mozol, P.O. Vlasenko, O.I. Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gnatyuk, V.A. Gorodnychenko, O.S. Mozol, P.O. Vlasenko, O.I. |
| author_sort |
Gnatyuk, V.A. |
| title |
Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_short |
Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_full |
Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_fullStr |
Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_full_unstemmed |
Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_sort |
modification of photoelectric and electrical properties of iii-v semiconductors by pulsed laser irradiation |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120232 |
| citation_txt |
Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation / V.A. Gnatyuk, O.S. Gorodnychenko, P.O. Mozol, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 26-30. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT gnatyukva modificationofphotoelectricandelectricalpropertiesofiiivsemiconductorsbypulsedlaserirradiation AT gorodnychenkoos modificationofphotoelectricandelectricalpropertiesofiiivsemiconductorsbypulsedlaserirradiation AT mozolpo modificationofphotoelectricandelectricalpropertiesofiiivsemiconductorsbypulsedlaserirradiation AT vlasenkooi modificationofphotoelectricandelectricalpropertiesofiiivsemiconductorsbypulsedlaserirradiation |
| first_indexed |
2023-10-18T20:36:43Z |
| last_indexed |
2023-10-18T20:36:43Z |
| _version_ |
1796150650183090176 |