Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures

Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures

A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caus...

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Дата:1999
Автори: Zhuchenko, Z.Ya., Tarasov, G.G., Lavorik, S.R., Mazur, Yu.I., Valakh, M.Ya., Kissel, H., Masselink, W.T., Mueller, U., Walther, C.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120245
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-120245
record_format dspace
spelling irk-123456789-1202452017-06-12T03:04:14Z Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures Zhuchenko, Z.Ya. Tarasov, G.G. Lavorik, S.R. Mazur, Yu.I. Valakh, M.Ya. Kissel, H. Masselink, W.T. Mueller, U. Walther, C. A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caused by repelling the Fermi-edge singularity (FES) and excitonic states. The character of repelling depends crucially on the excitation density and temperature. At low temperatures an appearance of the FES feature has been observed for the first time under excitation density elevation. This appearance is accompanied by formation of an abrupt high energy edge and occurs far below by intensity the hybridized n = 2 exciton manifestation. Strong screening of the n = 2 exciton state by photoexcited carriers is observed. The PL behavior under excitation density increase and temperature elevation near the Fermi edge is explained in terms of strong carrier density effect on the FES manifestation and is referred to the two-dimensional (2D) electron gas properties not yet explored theoretically. 1999 Article Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 78.55.Cr,73.40.Kp,71.27.+a http://dspace.nbuv.gov.ua/handle/123456789/120245 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caused by repelling the Fermi-edge singularity (FES) and excitonic states. The character of repelling depends crucially on the excitation density and temperature. At low temperatures an appearance of the FES feature has been observed for the first time under excitation density elevation. This appearance is accompanied by formation of an abrupt high energy edge and occurs far below by intensity the hybridized n = 2 exciton manifestation. Strong screening of the n = 2 exciton state by photoexcited carriers is observed. The PL behavior under excitation density increase and temperature elevation near the Fermi edge is explained in terms of strong carrier density effect on the FES manifestation and is referred to the two-dimensional (2D) electron gas properties not yet explored theoretically.
format Article
author Zhuchenko, Z.Ya.
Tarasov, G.G.
Lavorik, S.R.
Mazur, Yu.I.
Valakh, M.Ya.
Kissel, H.
Masselink, W.T.
Mueller, U.
Walther, C.
spellingShingle Zhuchenko, Z.Ya.
Tarasov, G.G.
Lavorik, S.R.
Mazur, Yu.I.
Valakh, M.Ya.
Kissel, H.
Masselink, W.T.
Mueller, U.
Walther, C.
Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Zhuchenko, Z.Ya.
Tarasov, G.G.
Lavorik, S.R.
Mazur, Yu.I.
Valakh, M.Ya.
Kissel, H.
Masselink, W.T.
Mueller, U.
Walther, C.
author_sort Zhuchenko, Z.Ya.
title Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_short Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_full Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_fullStr Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_full_unstemmed Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_sort many-body effects in photoluminescence of heavily doped algaas/ingaas /gaas heterostructures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/120245
citation_txt Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT zhuchenkozya manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT tarasovgg manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT lavoriksr manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT mazuryui manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT valakhmya manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT kisselh manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT masselinkwt manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT muelleru manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT waltherc manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
first_indexed 2023-10-18T20:36:34Z
last_indexed 2023-10-18T20:36:34Z
_version_ 1796150643368394752

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